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首页> 外文会议>Ferroelectric Thin Films XII >Enhanced Dielectric Properties Of Compositionally Modified BST Based Thin Films For Voltage Tunable Microwave Devices
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Enhanced Dielectric Properties Of Compositionally Modified BST Based Thin Films For Voltage Tunable Microwave Devices

机译：电压可调微波器件的成分改性BST基薄膜的增强介电性能

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In this work, material compositional design and optimized film processing methods, were employed to simultaneously lower the dielectric loss and enhance the dielectric tunability of Ba_(0.6)Sr_(0.4)TiO_3 (BST) based thin films without compromising the device impedance matching (ε_r<500) and device control voltage (<10 V) requirements. The films compositional design was achieved by Mg doping BST from 3 to 10 mol% via the metalorganic solution deposition (MOSD) technique and post-deposition annealing in an oxygen ambience. The films dielectric loss at these doping levels was identical, tan δ～0.007 and the permittivity values ranged from 339 to 220. Device quality values of tunability, 40 and 32%, for the 3 and 7 mol% doped BST films, respectively, were achieved by elevating the applied bias to 474 kV/cm. This device quality tuning is compatible with voltage requirements of current semiconductor based systems. The results suggest that the low level acceptor doping from 3 to 7 mol%, optimized precursor solution concentration (0.43 M), and oxygenated post-deposition thermal processing were found to work in concert to lower dielectric loss, limit defect density concentration, optimize film microstructure, and eliminate undesirable film/electrode interfacial phases. The enhanced dielectric and insulating properties of the 3 - 7 mol% Mg doped BST thin films make them excellent candidates for integration into tunable devices.
机译：在这项工作中，采用材料成分设计和优化的薄膜加工方法来同时降低基于Ba_（0.6）Sr_（0.4）TiO_3（BST）的薄膜的介电损耗并增强其介电可调性，而不会损害器件阻抗匹配（ε_r <500）和设备控制电压（<10 V）的要求。通过金属有机溶液沉积（MOSD）技术并在氧气氛围中进行沉积后退火，通过将Mg掺杂3至10 mol％的BST来实现膜的成分设计。在这些掺杂水平下，薄膜的介电损耗是相同的，tanδ〜0.007，介电常数范围为339至220。对于3和7 mol％掺杂的BST薄膜，器件质量的可调谐性分别为40％和32％。通过将施加的偏压提高到474 kV / cm来实现。该设备质量调整与当前基于半导体的系统的电压要求兼容。结果表明，低水平的受主掺杂（3至7 mol％），优化的前驱体溶液浓度（0.43 M）和氧化后沉积热处理可协同作用，以降低介电损耗，限制缺陷密度浓度，优化薄膜微结构，并消除了不希望的膜/电极界面相。 3-7 mol％的Mg掺杂BST薄膜具有增强的介电和绝缘性能，使其成为集成到可调器件中的极佳候选者。

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