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Ferroelectric memory in La substituted Bi_4Ti_3O_(12) thin films

机译：La替代Bi_4Ti_3O_（12）薄膜中的铁电记忆

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摘要

The recent demonstration of large ferroelectric memory in rare earth substituted Bi_4Ti_3O_(12) attracted a lot of research interest in this material. Bi_(4-x)La_xTi_3O_(12) was synthesized by sol-gel route for different compositions: x = 0.00, 0.46, 0.56, 0.75, 0.95 and thin films were deposited by spin coating on Pt (Pt/TiO_2/SiO_2/Si) substrate. The post annealed films at 700℃ were studied for their structural studies using x-ray diffraction and Raman spectroscopy. The prominent effect of La substitution is observed in low frequency Raman modes. X-ray diffraction and Raman studies show that the film growth was c-axis suppressed. Using improved contacts to Pt substrate, ferroelectric polarization P_r = 51 μC/cm~2 has been achieved for 0.63 μm thick film of composition: x = 0.56 (BLT56) without appreciable fatigue.
机译：最近在稀土替代Bi_4Ti_3O_（12）中展示的大型铁电存储器引起了对该材料的大量研究兴趣。通过溶胶-凝胶法合成了Bi_（4-x）La_xTi_3O_（12），合成了不同的组成：x = 0.00、0.46、0.56、0.75、0.95，并通过旋涂法在Pt（Pt / TiO_2 / SiO_2 / Si）上沉积薄膜） 基质。利用X射线衍射和拉曼光谱研究了700℃后退火后的薄膜的结构。在低频拉曼模式下观察到La替代的显着效果。 X射线衍射和拉曼研究表明，膜的生长被c轴抑制。使用与Pt基板的改进接触，对于0.63μm厚的组成成分：x = 0.56（BLT56）的薄膜，实现了铁电极化P_r = 51μC/ cm〜2，而没有明显的疲劳。

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