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Ferroelectric Films and Multilayers with Ultrahigh Dielectric Constants

机译：具有超高介电常数的铁电薄膜和多层

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This work presents a systematic study of ferroelectric films and multilayers made by a metal-organic chemical liquid deposition method. Ba_xSr_(1-x)TiO_3, Pb(Mg_(1/3)Nb_(2/3))O_3-PbTiO_3, and Pb(Zn_(1/3)Nb_(2/3))O_3-PbTiO_3 films, as well as multilayers incorporated with these materials have been grown at different conditions. Ultrahigh dielectric constant (～6700) has been achieved in the PMN/PZN-PT multilayers when the sublayer thickness approached to nanometer scale, where interfaces become dominant. When the sublayer materials with desired Curie temperatures were properly chosen, the temperature dependent dielectric constant of the multilayer structure could be greatly reduced. These nanostructured multilayers may find very important applications where temperature variation is a key concern. Pb doping in Ba_xSr_(1-x)TiO_3 was found very efficient in increasing the dielectric constant and reducing the loss. It is believed that the addition of Pb improved the film density and reduced the grain boundary defects.
机译：这项工作提出了一种通过金属有机化学液体沉积方法制备的铁电薄膜和多层薄膜的系统研究。 Ba_xSr_（1-x）TiO_3，Pb（Mg_（1/3）Nb_（2/3））O_3-PbTiO_3和Pb（Zn_（1 / 3_Nb_（2/3））O_3-PbTiO_3膜因为掺入这些材料的多层已经在不同条件下生长。当子层厚度接近纳米级时，在界面处占主导地位的PMN / PZN-PT多层中，已实现了超高介电常数（〜6700）。当适当地选择具有所需居里温度的子层材料时，多层结构的温度相关介电常数将大大降低。这些纳米结构多层可以找到非常重要的应用，其中温度变化是一个关键问题。发现Ba_xSr_（1-x）TiO_3中的Pb掺杂在提高介电常数和减少损耗方面非常有效。据信，Pb的添加改善了膜密度并减少了晶界缺陷。

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