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Comparative studies on BaZr_xTi_(1-x)O_3 thin films deposited by Sol-gel and Pulse laser deposition

机译：溶胶-凝胶和脉冲激光沉积BaZr_xTi_（1-x）O_3薄膜的比较研究

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Ferroelectric thin films of BaZr_xTi_(1-x)O_3 (BZT) were deposited on platinum (Pt) and platinized silicon (Pt/Si) substrates by sol-gel and pulse laser deposition technique respectively. The structure and preferred orientation of the films were examined by x-ray diffraction measurements. The phase formation of sol-gel derived BZT films were found to be at high temperature (1100℃) compare to the pulse laser deposited BZT films ～ 700℃. Polycrystalline films were observed by both techniques. Ferroelectric nature of the films was confirmed by hysteresis and capacitance-voltage characteristics using platinum top electrodes. Dielectric constant as well as loss was found to decrease by increasing Zr contents. Surface morphology predicted smooth crack free surface.

机译：BaZr_xTi_（1-x）O_3（BZT）的铁电薄膜分别通过溶胶-凝胶和脉冲激光沉积技术沉积在铂（Pt）和铂化硅（Pt / Si）衬底上。膜的结构和优选取向通过X射线衍射测量来检查。与脉冲激光沉积的BZT薄膜〜700℃相比，溶胶-凝胶衍生的BZT薄膜的相形成在高温（1100℃）下被发现。通过两种技术均观察到多晶膜。膜的铁电性质通过使用铂顶部电极的磁滞和电容-电压特性得到证实。发现通过增加Zr含量，介电常数以及损耗降低。表面形态预测光滑的无裂纹表面。

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《Ferroelectric Thin Films XII》|2003年|P.393-398|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
A.Dixit; P. Bhattacharaya; S.B. Majumder; R.S.Katiyar; A.S. Bhalla;
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Department of Physics, University of Puerto Rico, San Juan, PR-00931-3343;

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正文语种 eng
中图分类材料;
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Comparative studies on BaZr_xTi_(1-x)O_3 thin films deposited by Sol-gel and Pulse laser deposition

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