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首页> 外文会议>Ferroelectric Thin Films XII >Interface states of laser ablated BaTiO_3 and Ba_(0.9)Ca_(0.1)TiO_3 thin films in MFS structure determined by DLTS and C ― V technique
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Interface states of laser ablated BaTiO_3 and Ba_(0.9)Ca_(0.1)TiO_3 thin films in MFS structure determined by DLTS and C ― V technique

机译：用DLTS和C ― V技术确定MFS结构中激光烧蚀BaTiO_3和Ba_（0.9）Ca_（0.1）TiO_3薄膜的界面态。

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摘要

BaTiO_3 and Ba_(0.9)Ca_(0.1)TiO_3 thin films were deposited on the p ― type Si substrate by pulsed excimer laser ablation technique. The Capacitance ― Voltage (C―V) measurement measured at 1 MHz exhibited a clockwise rotating hysteresis loop with a wide memory window for the Metal -Ferroelectric - Semiconductor (MFS) capacitor confirming the ferroelectric nature. The low frequency C―V measurements exhibited the response of the minority carriers in the inversion region while at 1 MHz the C ― V is of a high frequency type with minimum capacitance in the inversion region. The interface states of both the MFS structures were calculated from the Castagne ― Vaipaille method (High - low frequency C―V curve). Deep Level Transient Spectroscopy (DLTS) was used to analyze the interface traps and capture cross section present in the MFS capacitor. There were distinct peaks present in the DLTS spectrum and these peaks were attributed to the presence of the discrete interface states present at the semiconductor -ferroelectric interface. The distribution of calculated interface states were mapped with the silicon energy band gap for both the undoped and Ca doped BaTiO_3 thin films using both the C ― V and DLTS method. The interface states of the Ca doped BaTiO_3 thin films were found to be higher than the pure BaTiO_3 thin films.
机译：通过脉冲准分子激光烧蚀技术在p ― Si型衬底上沉积BaTiO_3和Ba_（0.9）Ca_（0.1）TiO_3薄膜。在1 MHz下测量的电容-电压（C-V）测量显示出顺时针旋转的磁滞回线，具有宽的存储窗口，可用于确认金属铁电半导体（MFS）电容器的铁电特性。低频C–V测量显示了反转区域中少数载流子的响应，而在1 MHz时，C–V为高频类型，在反转区域中的电容最小。两种MFS结构的界面状态均根据Castagne ― Vaipaille方法（高低频C–V曲线）计算得出。深层瞬态光谱法（DLTS）用于分析界面陷阱并捕获MFS电容器中存在的横截面。 DLTS光谱中存在明显的峰，这些峰归因于半导体-铁电界面处存在的离散界面态。利用C-V和DLTS方法，将未掺杂和Ca掺杂的BaTiO_3薄膜的硅能带隙映射到计算的界面态分布。发现Ca掺杂的BaTiO_3薄膜的界面态高于纯的BaTiO_3薄膜。

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