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首页> 外文会议>Ferroelectric Thin Films XII >Effective Orientation Control of Pb(Zr_(0.4)Ti_(0.6))O_3 Thin Films Using A New Ti/Pb(Zr_(0.4)Ti_(0.6))O_3 Seeding Layer
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Effective Orientation Control of Pb(Zr_(0.4)Ti_(0.6))O_3 Thin Films Using A New Ti/Pb(Zr_(0.4)Ti_(0.6))O_3 Seeding Layer

机译：使用新的Ti / Pb（Zr_（0.4）Ti_（0.6））O_3种子层有效控制Pb（Zr_（0.4）Ti_（0.6））O_3薄膜的取向

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The effect of thin Ti/PbZr_(0.4)Ti_(0.6)O_3 seed layers on the properties of PbZr_(0.4)Ti_(0.6)O_3 (PZT) capacitors has been investigated. The seed layer is based on a bi-layer of thin Ti and thin PZT with a total thickness ranging from 10 to 25 nm, which was deposited on Ir/Pt or Ir/IrO_2/Pt by sputtering. After crystallization of the seed layers the main 130-nm-thick PZT film was deposited and crystallized. As a result, a highly preferred (111)-orientation of the PZT was obtained on a 10-nm-thick seed layer, where the peak intensity ratios of (111)/{100} and (111)/(110) are about 100 and 20, respectively. The 10-nm-thick seed forms a pyrochlore phase with a very smooth surface, where the formation of the pyrochlore phase is attributed to Pb diffusion, resulting in a Pb deficient stoichiometry. The seed layer transformed to the perovskite phase during the main PZT crystallization. It is shown that an IrO_2 layer beneath the Pt can prevent Pt layer degradation related to the volume expansion due to the oxidation of Ir during the main PZT crystallization. Capacitors with the 10-nm-thick seed layer fabricated on the Ir/Pt and Ir/IrO_2/Pt substrates showed typical 2 Pr values of 44.0 μC/cm~2 and 41.2 μC/cm~2, respectively. The voltage found for 90%-polarization saturation is about 3.0 V, and the capacitors are fatigue-free at least up to 10~(10) switching cycles.
机译：研究了薄Ti / PbZr_（0.4）Ti_（0.6）O_3种子层对PbZr_（0.4）Ti_（0.6）O_3（PZT）电容器性能的影响。种子层基于薄Ti和薄PZT的双层，其总厚度为10至25nm，其通过溅射沉积在Ir / Pt或Ir / IrO_2 / Pt上。晶种层结晶后，将沉积厚度为130 nm的主PZT膜并进行结晶。结果，在10nm厚的种子层上获得了高度优选的PZT的（111）取向，其中（111）/ {100}和（111）/（110）的峰值强度比约为100和20。 10 nm厚的种子形成表面非常光滑的烧绿石相，其中烧绿石相的形成归因于Pb扩散，导致Pb化学计量不足。在主PZT结晶过程中，晶种层转变为钙钛矿相。结果表明，在主PZT结晶过程中，Pt下的IrO_2层可以防止与体积膨胀有关的Pt层退化，这是由于Ir的氧化引起的。在Ir / Pt和Ir / IrO_2 / Pt基板上制造的具有10nm厚种子层的电容器的典型2 Pr值分别为44.0μC/ cm〜2和41.2μC/ cm〜2。 90％的极化饱和电压约为3.0 V，并且电容器至少在10〜（10）个开关周期内无疲劳。

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