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首页> 外文会议>Ferroelectric Thin Films XII >Ferro- and piezoelectric properties of Bi_(4-x)Pr_xTi_3O_(12) polycrystalline thick films with P_s-vector orientation
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Ferro- and piezoelectric properties of Bi_(4-x)Pr_xTi_3O_(12) polycrystalline thick films with P_s-vector orientation

机译：P_s矢量取向的Bi_（4-x）Pr_xTi_3O_（12）多晶厚膜的铁和压电性能

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摘要

To reveal the complete performance of intrinsic ferroelectriciy-related properties in single crystalline bismuth-layer-structured displacive ferroelectrics in film form on Si, the crucial roles of both orientation control technology by lattice matching from the atomic arrangement of substrate layer and configuration of the volume fraction of 90°-domain during cooling process were demonstrated. 1.2 um-thick and Pr~(3+)-substituted Bi_(4-x)Pr_xTi_3O_(12) (BPY, x=0.0, 0.3, 0.5, 0.7) films were grown on Ir(111)/Ti/SiO_2/Si(001) substrates by chemical solution deposition (CSD) method with preferred orientation along the major component off, vector. BPT film of x=0.3 exhibited superb ferroelectric properties of remanent polarization 2P_r=92 μC/cm~2, saturation polarization P_(sat)=50 μC/cm~2, and coercive field 2E_c=184 kV/cm. The film also showed uniform piezoelectric response with an effective piezoelectric coefficient of AFM-d_(33)=36 pm/V. During the decomposition of precursor solutions, IrO_2 layers were formed at the surface of Ir layers and promoted a/b-axes orientation. During the cooling process after grain growth, in addition, the differential thermal expansion and residual strain between film and substrate introduced bidirectional lateral stress into BPT film and might eliminate the 90°-domain walls dividing a-and b-domains through the relaxation by domain formation at the Curie temperature T_C. Consequently the polar-axis orientation was distinctively grown along the film normal and the conjugate non-polar-axis was grown in-plane.
机译：为了揭示硅上薄膜形式的单晶铋层结构的位移铁电体中固有的铁电相关性能的完整性能，这两种取向控制技术的关键作用是通过基体层的原子排列和体积构型进行晶格匹配演示了冷却过程中90°区域的分数。在Ir（111）/ Ti / SiO_2 / Si上生长1.2微米厚和Pr〜（3+）取代的Bi_（4-x）Pr_xTi_3O_（12）（BPY，x = 0.0，0.3，0.5，0.7）膜（001）通过化学溶液沉积（CSD）方法使基材具有沿着主要成分的优选取向，载体。 x ＝ 0.3的BPT膜表现出极好的铁电性质，即剩余极化2P_r ＝92μC/ cm〜2，饱和极化P_（sat）＝50μC/ cm〜2，矫顽场2E_c ＝ 184kV / cm。该膜还显示出均匀的压电响应，有效压电系数为AFM-d_（33）= 36 pm / V。在前体溶液的分解过程中，IrO_2层在Ir层的表面形成并促进了a / b轴取向。另外，在晶粒长大后的冷却过程中，薄膜和基体之间的热膨胀差异和残余应变将双向横向应力引入到BPT薄膜中，并可能消除通过畴的弛豫将a和b畴分开的90°畴壁。在居里温度T_C下形成。因此，极轴方向沿着薄膜法线明显地生长，共轭非极轴在平面内生长。

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