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首页> 外文会议>Ferroelectric Thin Films XII >Deposition Of BaTiO_3 Thin Films And MgO Buffer Layers On Patterned GaAs Substrates For Integrated Optics Applications
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Deposition Of BaTiO_3 Thin Films And MgO Buffer Layers On Patterned GaAs Substrates For Integrated Optics Applications

机译：在集成光学应用的图案化GaAs衬底上沉积BaTiO_3薄膜和MgO缓冲层

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摘要

This work addresses the need for thick layers of ferroelectric thin films on semiconductors for integrated optics applications. The deposition of BaTiO_3 thin films with MgO buffers on patterned GaAs substrates is presented as an approach to achieve crack-free optical waveguiding structures. Cracking and peeling of the thin films are observed on patterns with lateral dimensions exceeding 60 microns and nearly crack-free thin films for patterns with lateral dimensions of a few microns. The cracking and peeling of the thin films is attributed to thermal expansion mismatch during the heating and cooling steps of the deposition process. A thin film stress and fracture model is used to analyze the phenomenon. Reduced cracking and peeling on the patterned features are attributed to strain relief on the patterned features. The inclusion of thick Al_xO_y buffer layers obtained through wet-oxidation of AlGaAs prior to BaTiO_3/MgO deposition are presented as a means of obtaining electro-optic waveguide structures on GaAs.
机译：这项工作解决了集成光学应用中半导体上铁电薄膜厚层的需求。提出了利用MgO缓冲剂在图案化的GaAs衬底上沉积BaTiO_3薄膜的方法，以实现无裂纹的光波导结构。在横向尺寸超过60微米的图案上观察到薄膜的开裂和剥离，而对于横向尺寸为几微米的图案观察到几乎无裂纹的薄膜。薄膜的破裂和剥离归因于沉积过程的加热和冷却步骤期间的热膨胀失配。薄膜应力和断裂模型用于分析该现象。图案化特征上减少的裂纹和剥离归因于图案化特征上的应变消除。介绍了在BaTiO_3 / MgO沉积之前通过湿氧化AlGaAs获得的厚Al_xO_y缓冲层，作为在GaAs上获得电光波导结构的一种手段。

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