STRUCTURE ANALYSIS ON In-Se-BASED AMORPHOUS STORAGE FILMS

机译：In-Se基非晶存储膜的结构分析

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Amorphous chalcogenide films of In-Se-R(R=Pb) have been prepared by rf-sputtering. Based on the transmission electron micrographs and the electron diffraction patterns, the structure of the laser-induced written and erased domains of the In-Se-R(R=Pb) films are described.

机译：In-Se-R（R = Pb）的非晶硫族化物膜已通过射频溅射制备。基于透射电子显微照片和电子衍射图，描述了In-Se-R（R = Pb）膜的激光诱导的写入和擦除畴的结构。

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《Formation, structure and properties of glasses》|1994年|103-106|共4页
会议地点 Beijing(CN)
作者
F.JIANG; P.HUIPING; M.JIANG;
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作者单位

Shanghai Institute of Optics Fine Mechanics, Academia Sinica (Shanghai), CHINA;

Shanghai Institute of Optics Fine Mechanics, Academia Sinica (Shanghai), CHINA;

Shanghai Institute of Optics Fine Mechanics, Academia Sinica (Shanghai), CHINA;

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原文格式 PDF
正文语种 eng
中图分类玻璃工业;
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STRUCTURE ANALYSIS ON In-Se-BASED AMORPHOUS STORAGE FILMS

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