• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Fourth International Conference on Single Crystal Growth and Heat amp; Mass Transfer (ICSC - 2001) Vol.4; Sep 24-28, 2001; Obninsk, Russia >EVALUATION OF ARGON VELOCITIES AND TEMPERATURES ABOVE THE MELT IN THE CRUCIBLE
【24h】

EVALUATION OF ARGON VELOCITIES AND TEMPERATURES ABOVE THE MELT IN THE CRUCIBLE

机译：坩埚中熔体上方氩气速度和温度的评估

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

A low pressure flow of argon in a high-temperatures section of channel above silicon melt in a crucible is considered This flow is meant to carry silicon oxide vapors away from the melt. So, the diffusion of the oxide vapors in the argon flow and places of likely oxide condensation on the channel surfaces are of interest. These processes are governed by mass, movement, energy and concentration conservation laws, which makes a big enough system of equations, claiming high accuracy, but usually poorly supplemented with boundary data., An approximate approach is developed here. Estimates show that pressure changes insignificantly through this part of the channel because of low gas density and viscosity, so mass and energy equations remain to be solved. Next, temperatures and velocities are assumed uniform, across the channel on the surfaces set approximately normal to argon velocities, and then 1-D equations are solved through the channel.
机译：认为在坩埚中硅熔液上方的通道的高温部分中存在氩的低压流。该流旨在将氧化硅蒸气带离熔体。因此，关注氩气流中氧化物蒸气的扩散以及通道表面上可能的氧化物凝结的位置。这些过程受质量，运动，能量和浓度守恒定律的支配，该定律使方程组足够大，具有很高的精度，但通常边界数据补充得很少。在这里，开发了一种近似方法。估计表明，由于气体密度和粘度低，在通道的这一部分压力变化很小，因此质量和能量方程式尚待解决。接下来，假设温度和速度在设置为大致垂直于氩气速度的表面上的整个通道上是均匀的，然后通过该通道求解一维方程。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号