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首页> 外文会议>Fourth International Conference on Solid State Lighting >Performance and application of high power ultraviolet AlGaInN light emitting diodes
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Performance and application of high power ultraviolet AlGaInN light emitting diodes

机译：大功率紫外AlGaInN发光二极管的性能与应用

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摘要

We report on high output power from the quaternary AlGalnN multiple quantum well (MQW) ultraviolet light emitting diodes (UV LEDs) in the 340 nm and 280 nm wavelength range. The output power up to 1.5 mW from a 100 um diameter device with bare-chip configuration was measured under room temperature cw operation. The internal quantum efficiency was estimated to be between 7 and 10 %. In addition, the output power and external quantum efficiency for fully packaged 1x1 mm~2 large area device were as high as 54.6 mW and 1.45 %, respectively, at the injection current of 200 A/cm~2 under pulsed operation. The devices were incorporated into prototype system for fluorescence based bio-sensing. We also report the performance of 285 nm UV LEDs.
机译：我们报告了在340 nm和280 nm波长范围内的四元AlGalnN多量子阱（MQW）紫外发光二极管（UV LED）的高输出功率。在室温连续操作下，测量了具有裸芯片配置的100 um直径设备的最高1.5 mW的输出功率。内部量子效率估计在7％至10％之间。此外，在脉冲操作下，注入电流为200 A / cm〜2时，完全封装的1x1 mm〜2大面积器件的输出功率和外部量子效率分别高达54.6 mW和1.45％。该设备被并入用于基于荧光的生物传感的原型系统中。我们还报告了285 nm UV LED的性能。

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