Position dependent analysis of light extraction of GaN-based LEDs

机译：GaN基LED的光提取的位置相关分析

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摘要

In this paper, based on the Monte-Carlo ray tracing simulation we present the study of the light extraction efficiency of GaN-based LEDs as a function of the position of the light source over the active layer with several parameters, including chip dimensions, absorption coefficients and package. Besides, the light extraction efficient characteristic of a ThinGaN LED is studied.

机译：在本文中，基于蒙特卡洛光线追踪模拟，我们对基于GaN的LED的光提取效率进行了研究，该效率与光源在有源层上的位置有关，并具有多个参数，包括芯片尺寸，吸收率系数和包装。此外，还研究了ThinGaN LED的光提取效率特性。

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来源
《Fourth International Conference on Solid State Lighting》|2004年|P.111-118|共8页
会议地点 DenverCO(US)
作者
Ching-Cherng Sun; Tsung-Xian Lee; Chao-Ying Lin;
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作者单位

Optics of Solid-state Lighting Laboratory, Institute of Optical Sciences, National Central University, Chung-Li, 320 Taiwan, R.O.C.;

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会议组织
原文格式 PDF
正文语种 eng
中图分类晶体的光学性质;
关键词
GaN-based LED; monte-carlo ray tracing method; light extraction efficiency; ThinGaN;

机译：GaN基LED;蒙特卡洛射线追踪法;光提取效率; ThinGaN;

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4. Position-dependent analysis of light extraction of GaN-based LEDs [C] . Ching-Cherng Sun, Tsung-Xian Lee, Chao-Ying Lin International Conference on Solid State Lighting . 2004

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5. Optically functional structures on GaN-based light-emitting diodes for light-extraction efficiency enhancement and emission pattern control. [D] . Ma, Ming. 2013

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Position dependent analysis of light extraction of GaN-based LEDs

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