• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Fullerenes and Nanotubes: The Building Blocks of Next Generation Nanodevices: Fullorenes >CARBON NANOTUBE ELECTRONICS: THE 'INSIDE STORY'
【24h】

CARBON NANOTUBE ELECTRONICS: THE 'INSIDE STORY'

机译：碳纳米管电子：“内幕”

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We present results from two approaches to probe the connection between atomic-scale structure and/or defects and functional electronic properties in carbon nanotube-based devices. The effect of defects on electron transport in carbon nanotube field effect transistors (CNFETs) is measured by combined scanning gate microscopy (SGM) and scanning impedance microscopy (SIM). The Fermi energy of individual defects is quantified from SGM images with varying tip bias voltage. Three regimes of transport are identified as the back gate voltage is used to increase the carrier density within the CNFET: defect-limited transport at low carrier density, a diffusion-like regime at intermediate density, and a nearly ballistic regime at high carrier density. In a second set of experiments, we have developed a new chip-based platform for simultaneous transport measurement and transmission electron microscopy of active nanotube devices.
机译：我们提出了两种方法的结果，以探讨基于碳纳米管的器件中原子尺度结构和/或缺陷与功能电子特性之间的联系。缺陷对碳纳米管场效应晶体管（CNFET）中电子传输的影响通过组合扫描栅显微镜（SGM）和扫描阻抗显微镜（SIM）进行测量。从具有不同尖端偏置电压的SGM图像中量化单个缺陷的费米能量。三种传输方式被确定为背栅电压用于增加CNFET内的载流子密度：低载流子密度下的缺陷限制传输，中等密度下的扩散状传输方式以及高载流子密度下的近乎弹道传输方式。在第二组实验中，我们开发了一个新的基于芯片的平台，用于同时进行有源纳米管器件的传输测量和透射电子显微镜。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号