Structure and Physical Properties of C_(60) Field Effect Transistor

机译：C_（60）场效应晶体管的结构和物理特性

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The properties of FETs fabricated by C_(60) thin films grown on a silicon FET substrate are studied in detail, and the specific features are described to be compared with other organic semiconducting FETs. The structure of C_(60) thin films grown on silicon, silicon dioxide and aluminum oxide substrates is studied by low-angle X ray diffraction in order to understand the relationship between the observed FET properties and the thin film structure. It is demonstrated that the C_(60) <111> axis has a preferred orientated perpendicular to the Si (001) surface but with random in a plane. It is stressed that the characteristics of C_(60) FETs are very much influenced by exposure to air due to the electron carrier trapping levels and this is much larger than the degrees of crystallinity.

机译：详细研究了由在硅FET衬底上生长的C_（60）薄膜制造的FET的性能，并描述了其特定功能以与其他有机半导体FET进行比较。通过低角度X射线衍射研究了在硅，二氧化硅和氧化铝衬底上生长的C_（60）薄膜的结构，以了解所观察到的FET特性与薄膜结构之间的关系。证明了C_（60）<111>轴具有优选的取向，该取向垂直于Si（001）表面，但是在平面上是随机的。要强调的是，由于电子载流子的俘获能级，C_（60）FET的特性受暴露于空气的影响很大，并且比结晶度大得多。

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来源
《Fullerenes and Nanotubes: The Building Blocks of Next Generation Nanodevices: Fullorenes》|2003年|P.422-426|共5页
会议地点 Paris(FR);Paris(FR);Paris(FR)
作者
Katsumi Tanigaki; Hirotaka Ohashi; Ryotaro Kumashiro; Kenichi Kato; Shinobu Aoyagi; Shigeru Kimura; Masaki Takata;
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作者单位

Graduate School of Science, Materials Science Osaka City University 3-3-138 Sugimoto, Sumiyoshi, Osaka 558-8585, Japan;

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原文格式 PDF
正文语种 eng
中图分类无机高分子化合物（高聚物）;
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3. First-principles calculations of the geometry and electronic structure of electron- and hole-doped C_(60) in the field-effect transistor structure [J] . Tadahiko Chida, Shugo Suzuki, Kenji Nakao Physical Review. B, Condensed Matter . 2004,第20期

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Structure and Physical Properties of C_(60) Field Effect Transistor

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