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首页> 外文会议>Fullerenes and Nanotubes: The Building Blocks of Next Generation Nanodevices: Fullorenes >NANOSTRUCTURED PbTe THIN FILMS ELECTROCHEMICALLY DEPOSITED ON POROUS SILICON SUBSTRATE
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NANOSTRUCTURED PbTe THIN FILMS ELECTROCHEMICALLY DEPOSITED ON POROUS SILICON SUBSTRATE

机译：电化学沉积在多孔硅基体上的纳米结构的铅薄膜

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摘要

PbTe thin films were electrodeposited on porous silicon substrates from aqueous alkaline solutions of Pb(CH_3COO)_2, disodium salt of ethylendiaminetetraacetic acid (EDTA) and TeO_2 by galvanostatic and potentiostatic method. Porous silicon layer (PSL) has presented a nanometric porosity obtained by stain etching for different concentrations of HF and HNO_3, characteristic of heavily doped p type silicon. This porosity was analyzed by Atomic Force Microscopy (AFM) images. A strong photoluminescence characteristic for PSL was also evidenced by Raman spectra as a function of the etching time and HNO_3 concentration. It was obtained nanostructured PbTe thin films with polycrystalline morphology. The films also presented Pb peaks on X-Ray Diffraction (XRD) spectra depend on the growth process to be galvanostatic or potentiostatic. Films deposited by controlling deposition potential range have shown better crystalline quality. From Scanning Electron Microscopy (SEM) analysis it was observed good films reproducibility that present an average grain size of 100 nm.
机译：通过恒电流和恒电位法，从Pb（CH_3COO）_2的碱性水溶液，乙二胺四乙酸的二钠盐（EDTA）和TeO_2上将PbTe薄膜电沉积在多孔硅基板上。多孔硅层（PSL）呈现出通过对不同浓度的HF和HNO_3进行污点刻蚀获得的纳米孔隙度，这是重掺杂p型硅的特征。通过原子力显微镜（AFM）图像分析了该孔隙率。拉曼光谱还证明了PSL具有很强的光致发光特性，它是蚀刻时间和HNO_3浓度的函数。得到具有多晶形态的纳米结构的PbTe薄膜。薄膜还在X射线衍射（XRD）光谱上显示Pb峰，这取决于生长过程是恒电流的还是恒电位的。通过控制沉积电势范围沉积的薄膜显示出更好的结晶质量。从扫描电子显微镜（SEM）分析中，可以观察到良好的薄膜再现性，其平均晶粒尺寸为100 nm。

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