1207cm~(-1) infrared absorption band in carbon-rich silicon crystal

机译：富碳硅晶体中的1207cm〜（-1）红外吸收带

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Silicon wafers with different carbon contents have been characterized by Fourier transform infrared spectroscopy technique. An infrared absorption band at 1207cm~(-1) can be newly observed in the case of carbon content being above 1.7×10~(17)/cm~3, whose intensity increases with an increase of carbon concentration in silicon crystal. More interestingly, the 1207cm~(-1) band cannot be influenced by the long-time annealing in the temperature range of 450-1250℃, suggesting the high thermal stability of this carbon-related defect, which might be related to the presence of silicon carbide in silicon crystals.

机译：具有不同碳含量的硅晶片已经通过傅里叶变换红外光谱技术进行了表征。当碳含量高于1.7×10〜（17）/ cm〜3时，可以重新观察到1207cm〜（-1）的红外吸收带，其吸收强度随硅晶体中碳浓度的增加而增加。更有趣的是，在450至1250℃的温度范围内进行长时间退火不会影响1207cm〜（-1）的能带，这表明该碳相关缺陷的高热稳定性可能与碳原子的存在有关。硅晶体中的碳化硅。

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来源
《Gettering and defect engineering in semiconductor technology XIV》|2011年|p.172-177|共6页
会议地点 Loipersdorf(AT);Loipersdorf(AT)
作者
Lin Chen; Xuegong Yu; Peng Chen; Xin Gu; Jinggang Lu; Deren Yang;
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作者单位

State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China;

State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China;

State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China;

State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China;

Suntech Power Co., Wuxi 214028, People's Republic of China;

State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China;

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会议组织
原文格式 PDF
正文语种 eng
中图分类半导体技术;
关键词
silicon crystal carbon impurity infrared absorption;

机译：硅晶体碳杂质红外吸收;

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专利

1. 1207cm~1 infrared absorption band in carbon-rich silicon crystal [J] . Chen L., Yu X., Chen P., Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2011,第Null期

机译：富碳硅晶体中的1207cm〜1红外吸收带
2. 1207cm1 infrared absorption band in carbon-rich silicon crystal [J] . Chen L., Yu X., Chen P., Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2011,第Null期

机译：1207cm1富碳硅晶体中的红外吸收带
3. Uncertainty of the coefficient of band-to-band absorption of crystalline silicon at near-infrared wavelengths [J] . Carsten Schinke, Karsten Bothe, Peter Christian Peest, Applied Physics Letters . 2014,第8期

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4. 1207cm~(-1) infrared absorption band in carbon-rich silicon crystal [C] . Lin Chen, Xuegong Yu, Peng Chen, International Biannual Meeting on Gettering and Defect Engineering in Semiconductor . 2011

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5. I. The preparation and physical properties of crystalline lithium-alkyls. II. The integrated intensity of the infrared absorption band due to O-H stretching in aliphatic alcohols. [D] . Brown, Theodore L. 1956

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8. Near Infrared Absorption Band in Cadmium Sulfide Single Crystals [R] . Alvares, N. J. 1965

机译：镉硫化物单晶中的近红外吸收带

1207cm~(-1) infrared absorption band in carbon-rich silicon crystal

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