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首页> 外文会议>Global Symposium on Recycling, Waste Treatment and Clean Technology; 20040926-29; Madrid(ES) >GALVANOSTATIC OXIDATION OF HIGH TOC PLATING BATHS
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GALVANOSTATIC OXIDATION OF HIGH TOC PLATING BATHS

机译：高TOC镀液的恒电流氧化

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Printed circuit board copper lines are built-up by electroplating from copper sulphate baths. Organic additives are continuously added to improve quality and speed of plating. Decomposed additives and organic compounds leached from the printed circuit boards and their photo resist, built-up in the plating bath. Eventually high contamination levels, as measured by total organic carbon (TOC), cause poor plating quality. Several methods have been considered to maintain the plating bath quality within narrower limits, but they all have raised concerns. Here we describe an electrochemical route, using a two-compartment cell submitted to galvanostatic testing, that seems to be competitive. The solutions being oxidised were synthetic copper sulphate baths with 200g/L H_2SO_4,15-25 g/L copper, and 1500-2500 ppm TOC. The effects of anode materials, cell membranes, and current densities on the processing efficiency for the oxidation of the target compounds without changing other properties of the plating bath chemistry, were studied. Among the anode materials (Au, Pt, PbO_2,IrO_2, SnO_2) investigated, doped tin dioxide electrodes showed good stability and efficiency for TOC destruction. The results of the various tin dioxide current density tests showed that there is a large increase in efficiency with decreasing current density (from 250 mA/cm~2 to 1.0 mA/cm~2). Concerning the cell membrane our work focused on evaluating cation exchange membranes for their ability to block the passage of copper ions, the best results being obtained using monovalent cation selective membranes and Nafion membranes. Although this initial work needs to be refined, it definitely shows that the present electrochemical approach can succeed in the destruction of organics in printed circuit board plating baths.
机译：印刷电路板铜线是通过从硫酸铜浴中电镀而建立的。连续添加有机添加剂以提高电镀质量和速度。从印刷电路板及其光致抗蚀剂中浸出的分解添加剂和有机化合物积聚在电镀液中。最终，高污染水平（以总有机碳（TOC）衡量）会导致镀层质量下降。已经考虑了几种方法来将电镀液的质量保持在较窄的范围内，但是它们都引起了人们的关注。在这里，我们使用提交给恒电流测试的两室电池描述了一种似乎具有竞争性的电化学途径。被氧化的溶液是含有200g / L H_2SO_4、15-25 g / L铜和1500-2500 ppm TOC的合成硫酸铜浴。研究了阳极材料，细胞膜和电流密度对目标化合物氧化处理效率的影响，而没有改变镀液化学性质。在研究的阳极材料（Au，Pt，PbO_2，IrO_2，SnO_2）中，掺杂的二氧化锡电极显示出良好的稳定性和TOC破坏效率。各种二氧化锡电流密度测试的结果表明，随着电流密度的降低（从250 mA / cm〜2到1.0 mA / cm〜2），效率有很大的提高。关于细胞膜，我们的工作重点是评估阳离子交换膜阻断铜离子通过的能力，使用单价阳离子选择性膜和Nafion膜可获得最佳结果。尽管此初始工作需要改进，但它绝对表明本电化学方法可以成功地破坏印刷电路板电镀液中的有机物。

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