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Structural properties of MOVPE-grown ZnSe studied by X-ray diffractometry, atomic force microscopy and electron microscopy

机译：X射线衍射，原子力显微镜和电子显微镜研究MOVPE生长的ZnSe的结构性质

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ZnSe/GaAs heterostructures grown by metalorganic vapor-phase epitaxy were investigated by high-resolution X-ray diffractometry (HRXRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and scanning transmission electron microscopy (STEM). The SEM and AFM images indicate structural defects in the form of pyramids on the sample surfaces for thin ZnSe layers. With increasing ZnSe layer thickness the size of pyramids generally increases. Finally, for the case of very thick ZnSe layers the pyramids develop into polycrystalline islands. X-ray diffraction measurements demonstrate the tendency of polycrystalline growth with increasing thickness of ZnSe layers. The STEM bright field images show the formation of misfit dislocations already at the ZnSe/GaAs interfaces, which are correlated with the development of pyramid-like hillocks on the ZnSe surfaces. direct c 1999 Elsevier Science B.V. All rights reserved.
机译：通过高分辨率X射线衍射（HRXRD），扫描电子显微镜（SEM），原子力显微镜（AFM）和扫描透射电子显微镜（STEM）研究了金属有机气相外延生长的ZnSe / GaAs异质结构。 SEM和AFM图像显示了薄ZnSe层在样品表面上呈金字塔形的结构缺陷。随着ZnSe层厚度的增加，金字塔的尺寸通常会增加。最后，对于非常厚的ZnSe层，金字塔会发展成多晶岛。 X射线衍射测量表明，随着ZnSe层厚度的增加，多晶生长的趋势。 STEM明场图像显示已经在ZnSe / GaAs界面上形成了错配位错，这与ZnSe表面上金字塔状小丘的发展有关。直接c 1999 Elsevier Science B.V.保留所有权利。

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