Electron-irradiation enhanced dislocation glide in II-VI semiconductors

机译：II-VI半导体中电子辐照增强的位错滑动

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Transmission electron microscope in situ deformation experiments have been performed on ZnS and AnSe single crystals to get quantitative information on the effect of electronic excitation on dislocation movement. The dislocation mobility is strongly enhanced by electron irradiation as a result of the lowering of the lattice friction. The observed reduction in activation energy is discussed in terms of the radiation-enhanced dislocation glide mechanism, due to nonradiative recombination of injected carriers at electronic levels associated with dislocations. direct c 1999 Elsevier Science B.V. All rights reserved.

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《Growth, characterisation and applications of bulk II-VIs》|1998年|p.565-570|共6页
会议地点 Strasbourg(FR)
作者
Colette Levade; Guy Vanderschaeve;
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原文格式 PDF
正文语种 eng
中图分类电工技术;
关键词
Dislocation mobility; Cathodoplastic effect; II-VI semiconductors; Transmission electron microscopy; In situ deformation;

机译：脱位流动性；阴极增塑作用； II-VI半导体；透射电子显微镜；原位变形;

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专利

1. Electron-irradiation enhanced dislocation glide in II-VI semiconductors [J] . Colette Levade, Guy Vanderschaeve Journal of Crystal Growth . 1999,第3期

机译：II-VI半导体中电子辐照增强的位错滑动
2. Structures of glide-set 90 degrees partial dislocation cores in diamond cubic semiconductors [J] . Beckman SP., Chrzan DC. Physica, B. Condensed Matter . 2003,第0期

机译：金刚石立方半导体中的滑移定角90度部分位错核的结构
3. Removal of Threading Dislocations from Patterned Heteroepitaxial Semiconductors by Glide to Sidewalls [J] . X.G. ZHANG, P. LI, G. ZHAO Journal of Electronic Materials . 1998,第7a12期

机译：通过滑模去除侧壁上图案化异质外延半导体的螺纹位错
4. Electron-irradiation enhanced dislocation glide in II-VI semiconductors [C] . Colette Levade, Guy Vanderschaeve, European Materials Research Society Symposium C on growth, characterisation and applications of bulk II-VIs of the E-MRS 1998 spring conference . 1999

机译：II-VI半导体中的电子辐照增强位错滑动
5. Mechanisms of hardening in HCP structures through dislocation transmutation and accommodation effects by glide twinning: Application to magnesium. [D] . Oppedal, Andrew Lars. 2010

机译：通过位错trans变和滑行孪生产生的调节作用在HCP结构中硬化的机理：应用于镁。
6. Magnetism in the p-type Monolayer II-VI semiconductors SrS and SrSe [O] . Heng-Fu Lin, Woon-Ming Lau, Jijun Zhao -1

机译：p型单层II-VI半导体SrS和SrSe中的磁性
7. Misfit accommodation and dislocations in heteroepitaxial semiconductor layers: II-VI compounds on GaAs [O] . G. Patriarche, J. P. Rivière, J. Castaing 1993

机译：异质轴半导体层的错位住宿和脱位：GaAs上的II-VI化合物
8. Electron-Beam-Enhanced Oxidation Processes in II-VI Compound Semiconductors Observed by High-Resolution Electron Microscopy. [R] . Thangaraj, N., Wessels, B. W. 1990

机译：通过高分辨率电子显微镜观察II-VI化合物半导体中的电子束增强氧化过程。

Electron-irradiation enhanced dislocation glide in II-VI semiconductors

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