Generation-recombination noise and photo-induced transient conductivity in epitaxial CdHgTe long wavelength infrared detectors

机译：外延CdHgTe长波长红外探测器中的产生复合噪声和光诱导瞬态电导率

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Measurements are described of I-V characteristics, resistance versus T~-1, noise and photoresponse for frequencies of 10 Hz to 1 MHz in the temperature range 300-50 K for cadmium-mercury telluride long-wavelength infrared detectors having 1#mu# epitaxial layers on wide band gap material. The noise consists of 1/f noise and one or two Lorentzians, attributed to shallow hole traps, probably associated with Hg vacancies. The results are discussed and analyzed after a brief resume of g-r noise. The PICTS response curves are attributed to tunneling to interface states. direct c 1999 Elsevier Science B.V. All rights reserved.

机译：描述了具有1＃mu＃外延层的碲化镉汞长波长红外探测器在300-50 K温度范围内10 Hz至1 MHz频率下的IV特性，电阻对T〜-1，噪声和光响应的测量结果在宽带隙材料上。噪声由1 / f噪声和一个或两个洛伦兹噪声组成，归因于浅孔陷阱，可能与汞空位有关。在短暂恢复g-r噪声后，将对结果进行讨论和分析。 PICTS响应曲线归因于隧穿到接口状态。直接c 1999 Elsevier Science B.V.保留所有权利。

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《Growth, characterisation and applications of bulk II-VIs》|1998年|p.547-551|共5页
会议地点 Strasbourg(FR)
作者
Nichols Paul; Carolyne M.Van Vliet; Sylvia Mergui;
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原文格式 PDF
正文语种 eng
中图分类电工技术;
关键词
Noise; Generation-recombination processes; Traps; Vacancies; Interface-states;

机译：噪声;世代重组过程；陷阱空缺；接口状态;

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专利

1. Generation-recombination noise and photo-induced transient conductivity in epitaxial CdHgTe long wavelength infrared detectors [J] . Nichols Paul, Carolyne M. Van Vilet, Sylvia Mergui Journal of Crystal Growth . 1999,第3期

机译：外延CdHgTe长波长红外探测器中的产生复合噪声和光诱导瞬态电导率
2. Impact of conductivity type change in InAs/GaSb superlattice on low frequency noise of photoconductive long-wavelength infrared detectors [J] . Lukasz Ciura, Agata Jasik, Krzysztof Czuba Applied Physics Letters . 2021,第26期

机译：INAS / GASB超晶格在光电导长波长红外探测器低频噪声中的影响
3. Planar n-on-p Ion Milled Mid-Wavelength and Long-Wavelength Infrared Diodes on Molecular Beam Epitaxy Vacancy-Doped CdHgTe on CdZnTe [J] . R. Haakenaasen, H. Steen, T. Lorentzen, Journal of Electronic Materials . 2002,第7期

机译：CdZnTe分子束外延掺杂CdHgTe上平面n-p离子铣削中波长和长波长红外二极管
4. Generation-recombination noise and photo-induced transient conductivity in epitaxial CdHgTe long wavelength infrared detectors [C] . Nichols Paul, Carolyne M.Van Vliet, Sylvia Mergui, Symposium C on growth, characterisation and applications of bulk II-VIs of the E-MRS 1998 spring conference . 1999

机译：外延CDHGTE长波长红外探测器中的生成 - 重组噪声和光致瞬态电导率
5. Improved N-Type 4H-SiC Epitaxial Layer Radiation Detectors and Noise Analysis of Front-End Readout Electronics [D] . Nguyen, Khai V. 2017

机译：改进的N型4H-SiC外延层辐射探测器和前端读出电子设备的噪声分析
6. High-Performance Anodic Vulcanization-Pretreated Gated P+–π–M–N+ InAs/GaSb Superlattice Long-Wavelength Infrared Detector [O] . Ju Sun, Nong Li, Qing-Xuan Jia, 2021

机译：高性能阳极硫化 - 预处理门控P + -IN-M-N + INAS / GASB超晶格长波长红外探测器
7. Impact of conductivity type change in InAs/GaSb superlattice on low frequency noise of photoconductive long-wavelength infrared detectors [O] . Łukasz Ciura, Agata Jasik, Krzysztof Czuba 2021

机译：INAS / GASB超晶格中电导率变化对光电导长波长红外探测器低频噪声的影响
8. Stress Induced Long Wavelength Photoconductivity in Doped Silicon Infrared Detectors [R] . Houck, J. R. 1982

机译：应力诱导长波硅红外探测器的长波长光电导

Generation-recombination noise and photo-induced transient conductivity in epitaxial CdHgTe long wavelength infrared detectors

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