Distribution of tellurium in melt-grown ZnSe(Te) crystals

机译：碲在熔融生长的ZnSe（Te）晶体中的分布

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

The properties of semiconductor scintillation crystals are largely determined by the presence and distribution of the activator dopant. Influence of growth technological parameters (overheating #DELTA#T, inert gas pressure P, crystallization rate V_k) upon distribution of tellurium dopant was studied for ZnSe(Te) crystals grown by Bridgman technique in compression furnaces. Values of the "apparent" distribution coefficient of tellurium (k_Te) over crystal length were shown to be dependent on #DELTA#T and the related value of charge carry-over (#DELTA#m/m_0). It was established that at #DELTA#m/m_0=12

机译：半导体闪烁晶体的特性在很大程度上取决于活化剂掺杂剂的存在和分布。研究了布里奇曼技术在压缩炉中生长的ZnSe（Te）晶体的生长工艺参数（过热＃DELTA＃T，惰性气体压力P，结晶速率V_k）对碲掺杂剂分布的影响。碲（k_Te）在晶体长度上的“表观”分布系数的值显示为取决于＃DELTA＃T和电荷携带的相关值（＃DELTA＃m / m_0）。确定在＃DELTA＃m / m_0 = 12

著录项

来源
《Growth, characterisation and applications of bulk II-VIs》|1998年|p.471-474|共4页
会议地点 Strasbourg(FR)
作者
L.V.Atroshchenko; L.P.Galchinetskii; S.N.Galkin; V.D.Ryzhikov; V.I.Silin; N.I.Shevtsov;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类电工技术;
关键词
Solid solution; Zinc selenide crystals; Effective distribution coefficient of tellurium;

机译：实在的方法;硒化锌晶体；碲的有效分配系数;

相似文献

外文文献
中文文献
专利

1. Distribution of tellurium in melt-grown ZnSe(Te) crystals [J] . L.V. Atroshchenko, L.P. Galchinetiskii, S.N. Galkin Journal of Crystal Growth . 1999,第3期

机译：碲在熔融生长的ZnSe（Te）晶体中的分布
2. Effects of tellurium concentration on the structure of melt-grown ZnSe crystals [J] . Lyubov V. Atroshchenko, Sergey N. Galkin, Irina A. Rybalka, Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment . 2005,第1a2期

机译：碲浓度对熔融生长ZnSe晶体结构的影响
3. Effect of dopant Cr ions on the dielectric properties of melt-grown ZnSe crystals [J] . Chugai O.N., Gerasimenko A.S., Komar V.K., Physics of the solid state . 2013,第1期

机译：掺杂Cr离子对熔体生长ZnSe晶体介电性能的影响
4. Distribution of tellurium in melt-grown ZnSe(Te) crystals [C] . L.V.Atroshchenko, L.P.Galchinetskii, S.N.Galkin, Symposium C on growth, characterisation and applications of bulk II-VIs of the E-MRS 1998 spring conference . 1999

机译：在熔融生长的ZnSE（TE）晶体中的碲分布
5. Defect characterization in cadmium telluride and cadmium-zinc-tellurium crystals. [D] . Awadalla, Salah Abdo. 2003

机译：碲化镉和镉锌碲晶体的缺陷表征。
6. Crystalline Quality Composition Homogeneity Tellurium Precipitates/Inclusions Concentration Optical Transmission and Energy Band Gap of Bridgman Grown Single-Crystalline Cd1−xZnxTe (0 ≤ x ≤ 0.1) [O] . Ana María Martínez, Paula Giudici, Alicia Beatriz Trigubó, 2021

机译：结晶质量组成均匀性碲沉淀物/夹杂物浓度光学传动光学传输和能带隙的Bridgman生长单晶CD1-xZnxte（0≤x≤0.1）
7. On the Optical Response of Tellurium Activated Zinc Selenide ZnSe:Te Single Crystal [O] . Dionysios Linardatos, Anastasios Konstantinidis, Ioannis Valais, 2020

机译：关于碲活性锌硒锌锌的光学响应：TE单晶

Distribution of tellurium in melt-grown ZnSe(Te) crystals

摘要

著录项

相似文献

相关主题

期刊订阅