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Characterization of a LA-based CMOS monolithic detector

机译:基于LA的CMOS单片检测器的表征

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This paper is a progress report of the design and characterization of a monolithic CMOS detector with an on-chip ZA ADC. A brief description of the design and operation is given. Backside processing steps to allow for backside illumination are summarized. Current characterization results are given for pre- and post-thinned detectors. Characterization results include measurements of: gain photodiode capacitance, dark current, linearity, well depth, relative quantum efficiency, and read noise. Lastly, a detector re-design is described; and initial measurements of its photodiode capacitance and read noise are presented.
机译:本文是带有片上ZA ADC的单片CMOS检测器的设计和表征的进展报告。给出了设计和操作的简要说明。总结了允许背面照明的背面处理步骤。给出了前减薄后检测器的当前表征结果。表征结果包括以下测量:增益光电二极管电容,暗电流,线性度,阱深度,相对量子效率和读取噪声。最后,描述了探测器的重新设计。并介绍了其光电二极管电容和读取噪声的初始测量结果。

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