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Performance analysis of cryogenic silicon Laue monochromators at APS undulators

机译：低温硅劳厄单色仪在APS起伏器上的性能分析

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Abstract: We investigated the performance of a cryogenically cooled silicon monochromator crystal exposed to high power x-ray undulator radiation. The heat transfer in this nonlinear material was studied analytically by approximating the thermal conductivity and then scaling relations for the temperature distributions with the cooling temperature and the power load were found. The strain distributions in this nonlinear material were studied analytically by approximating the thermal expansion coefficient. The broadening of the rocking curve was found to be determined, to the first order, by the maximum temperature and a load factor $gamma which is determined by the properties of the source and the crystal, and independent of the optical geometry. Major conclusions were verified through numerical analysis with the program ANSYS. We concluded that cryogenically cooled silicon Laue monochromator should work with Undulator A at the Advanced Photon Source. !17
机译：摘要：我们研究了低温冷却的硅单色仪晶体在大功率x射线波动器辐射下的性能。通过逼近热导率来分析研究这种非线性材料中的热传递，然后发现温度分布与冷却温度和功率负载的比例关系。通过近似热膨胀系数来分析研究这种非线性材料中的应变分布。发现摇摆曲线的展宽是由最高温度和由光源和晶体的特性决定的并且与光学几何形状无关的负载因子$ gamma决定的，这是一阶的。使用ANSYS程序通过数值分析验证了主要结论。我们得出的结论是，低温冷却的硅Laue单色仪应与高级光子源的Undulator A一起使用。 ！17

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