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首页> 外文会议>High-Power Diode Laser Technology and Applications IV >Diode Laser Efficiency Increases Enable > 400-W Peak Power from 1-cm Bars and Show Clear Path to Peak Powers in Excess of 1-kW
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Diode Laser Efficiency Increases Enable > 400-W Peak Power from 1-cm Bars and Show Clear Path to Peak Powers in Excess of 1-kW

机译：二极管激光器的效率提高了从1-cm的条获得的> 400W峰值功率的能力，并显示了超过1kW的峰值功率的清晰路径

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摘要

Peak optical power from single 1-cm diode laser bars is advancing rapidly across all commercial wavelengths. Progress in material performance is reviewed and we show that current trends imply there is no fundamental barrier to achieving peak powers of 1-kW per 1-cm diode laser bar. For bars with such high peak powers, commercially available reliable devices would be expected to deliver ～ 300-W per bar. Progress to date has allowed us to demonstrate > 400-W peak output from single 1-cm diode laser bars at emission wavelengths from 800-nm to 980-nm. The available range of emission wavelengths has also been increased, with 90-W bars shown at 660-nm and 24W at 1900-nm, complementing the 100-W bar previously demonstrated at 1470-nm. Peak power is seen to correlate closely peak efficiency. Further advances in diode laser efficiency and low thermal resistance packaging technology continue to drive these powers higher. The most critical improvements have been the reduction in the diode laser operating voltage through optimization of hetero-barriers (leading to 73% efficient 100-W bars on copper micro-channel) and a reduction in packaging thermal resistance by optimizing micro-channel performance (leading to < 0.2-℃/W thermal resistance).
机译：单个1厘米二极管激光棒的峰值光功率在所有商业波长中都在迅速发展。回顾了材料性能的进展，我们发现当前的趋势表明，实现每1厘米二极管激光棒1千瓦峰值功率没有基本障碍。对于具有如此高峰值功率的棒材，预计可商购的可靠设备每棒材可提供约300 W的功率。迄今为止的进展使我们能够证明单个1-cm二极管激光棒在800nm至980nm的发射波长下具有> 400W的峰值输出。发射波长的可用范围也有所增加，在660 nm处显示90 W棒，在1900 nm处显示24 W，以补充先前在1470 nm处展示的100 W棒。峰值功率被认为与峰值效率紧密相关。二极管激光器效率和低热阻封装技术的进一步发展继续将这些功率驱动得更高。最关键的改进是通过优化异质势垒来降低二极管激光器的工作电压（导致铜微通道上的有效100W栅栏效率达到73％），以及通过优化微通道性能来降低封装热阻（导致<0.2℃/ W的热阻）。

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