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A decrease in the damage threshold in dielectric materials induced by negatively chirped laser pulses

机译:负chi激光脉冲引起的介电材料损伤阈值的降低

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The threshold fluence for laser induced damage in wide band gap dielectric materials, such as fused silica and MgF_2, is observed to be lower by up to 20% for negatively (down) chirped pulses than for positively (up) chirped, at pulse durations ranging from 60 fs to 1 ps. This behavior of the threshold fluence for damage on the chirp direction was not observed in semiconductors, such as silicon and GaAs. Based on a model describing electron generation in the conduction band and Joule heating, it is suggested that the decrease in the damage threshold for negatively chirped pulse is related to the role of multiphoton ionization in wide gap materials.
机译:在脉冲宽度范围内,对于负(向下)chi脉冲,宽带隙介电材料(如熔融石英和MgF_2)中激光诱导的损伤的阈值通量比正(向上)rp脉冲降低了20%。从60 fs到1 ps。在诸如硅和GaAs之类的半导体中未观察到在the方向上损坏的阈值通量的这种行为。基于描述导带中电子生成和焦耳加热的模型,建议负chi脉冲的损伤阈值降低与宽间隙材料中多光子电离的作用有关。

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