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In-situ Synthesis and Oxidation Resistance of C-SiC-TiC-TiB_2 Composite

机译:C-SiC-TiC-TiB_2复合材料的原位合成及抗氧化性能

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Effects of the contents of TiO_2 and TiC on the microstructure and properties of C-SiC-TiC-TiB_2 composite were investigated. In-situ synthesis of TiB_2, SiC and TiC occurred during the sintering process. The formation of these ceramic phases has evident improvement on the properties of the composite. The addition of TiO_2 can make the material densification at lower temperature than the addition of TiC. Oxidation of the composite was conducted from 600 to 1200℃. in air. Both weight gain and loss occurred by the difference of composition and test temperature. TiB_2 was first oxidized at 800℃. B_2O_3 and SiO_2 trend to form a borosilicate glass above 1000 ℃, which lead to a formation of dense oxide film on the surface. This makes the oxidation mechanism of the composite into blunting oxidation, resulting in excellent oxidation resistance.
机译:研究了TiO_2和TiC的含量对C-SiC-TiC-TiB_2复合材料组织和性能的影响。在烧结过程中发生了TiB_2,SiC和TiC的原位合成。这些陶瓷相的形成明显改善了复合材料的性能。 TiO 2的添加比TiC的添加可以使材料在更低的温度下致密化。复合材料的氧化温度为600至1200℃。在空中。重量的增加和减少都是由于成分和测试温度的不同而发生的。首先在800℃氧化TiB_2。 B_2O_3和SiO_2在1000℃以上趋于形成硼硅酸盐玻璃,从而在表面形成致密的氧化膜。这使得复合物的氧化机理变成钝化氧化,从而导致优异的抗氧化性。

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