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MMS TECHNOLOGY: FIRST RESULTS AND PROSPECTS

机译：MMS技术：初步结果和前景

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摘要

Composites with SiC-matrix or with prevailing SiC matrix are the main ceramic composites that are used at present in various fields. SiC matrix can be derived either from a vapor phase or by impregnating of preforms. The most common technology of obtaining SiC-matrix by CVI is the process which uses methyltrichlorsilane (MTS) as a raw material. Obtaining SiC-matrix from monomethylsilane (MMS) is an alternative method of CV1/CVD. Important advantage of this technology is absence of need in powerful purification systems, especially in case of a huge dimension of equipment employed. This paper gives data on C-SiC composites with matrix derived from MMS including applications as uncooled nozzle extensions of rocket engines, cross-type high temperature heat exchangers, combustion chambers of low-thrust engines. In spite of amorphous structure of SiC deposit it is capable of crystallizing to a considerable extent at 1200℃. The greater temperature of the C-SiC composite annealing leads to a more crystalline SiC matrix. It is shown that high oxidation resistance (at 1500-1600℃ and up to 1800℃) of C-SiC composite are conditioned also by high phase homogeneity of SiC matrix and its chemical purity.
机译：具有SiC基体或占主导地位的SiC基体的复合材料是目前在各个领域中使用的主要陶瓷复合材料。 SiC基质可以从气相中获得，也可以通过预成型件的浸渍获得。通过CVI获得SiC基体的最常见技术是使用甲基三氯硅烷（MTS）作为原料的工艺。从单甲基硅烷（MMS）获得SiC基质是CV1 / CVD的另一种方法。该技术的重要优点是不需要强大的净化系统，尤其是在使用大型设备的情况下。本文提供了具有MMS基质的C-SiC复合材料的数据，包括火箭发动机的非冷却喷嘴扩展，交叉型高温热交换器，低推力发动机的燃烧室的应用。尽管SiC沉积物为非晶结构，但它仍能够在1200℃的温度下结晶。 C-SiC复合退火的温度越高，SiC基质越结晶。结果表明，SiC基体的高相均质性及其化学纯度也决定了C-SiC复合材料的高抗氧化性（在1500-1600℃以及高达1800℃）。

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