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The Time and Temperature Dependence of AISI 316L Corrosion in Chlorosilane Environments

机译:氯硅烷环境中AISI 316L腐蚀的时间和温度依赖性

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Chlorosilanes are used abundantly at high temperatures in the production of ultra-pure silicon and silicon containing materials. The presence of both chlorine and silicon presents a unique corrosion environment for the metallic materials that must handle these compounds. It is known that in chlorosilane environments, 316L can form either a protective metal silicide layer or a volatile metal chloride species. However, it is not known what dependence this surface reaction has on temperature, time, or gas composition. In this study, AISI 316L stainless steel was exposed to vaporized silicon tetrachloride (STC, SiCl_4), pure hydrogen (H_2), and anhydrous hydrogen chloride (HCl) at temperatures (>500℃), times (1-200 hours), and compositions relevant to industrial processes. Metal silicide and metal chloride formation was evaluated using surface and gravimetric analysis, with metal silicide formation causing a gain in sample mass and metal chloride formation causing a loss in sample mass. It was revealed that the transition between chloride and silicide formation depends on time of exposure, temperature, and mole fraction of HCl present in the gas stream. Lastly, some discussion is provided on the underlying mechanisms of silicide and chloride formation, and how to prevent excessive corrosion in industrial applications.
机译:氯硅烷在高温下大量用于生产超纯硅和含硅材料。氯和硅的存在为必须处理这些化合物的金属材料提供了独特的腐蚀环境。众所周知,在氯硅烷环境中,316L可以形成保护性金属硅化物层或挥发性金属氯化物。但是,尚不知道该表面反应对温度,时间或气体成分有什么依赖性。在这项研究中,AISI 316L不锈钢在温度(> 500℃),时间(1-200小时)和温度下暴露于汽化的四氯化硅(STC,SiCl_4),纯氢(H_2)和无水氯化氢(HCl)。与工业过程有关的成分。使用表面和重量分析法评估金属硅化物和金属氯化物的形成,其中金属硅化物的形成导致样品质量的增加,而金属氯化物的形成导致样品质量的损失。揭示了氯化物和硅化物形成之间的过渡取决于暴露时间,温度和气流中存在的HCl的摩尔分数。最后,讨论了硅化物和氯化物形成的潜在机理,以及如何防止工业应用中的过度腐蚀。

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  • 会议地点 Chicago IL(US)
  • 作者单位

    Mechanical and Industrial Engineering, Montana State University, Bozeman, Montana 59717, USA;

    Chemical Engineering, Montana State University, Bozeman, Montana 59717, USA;

    GT Advanced Technologies, Polysilicon and PV, Missoula, Montana 59801, USA;

    Chemical Engineering, Montana State University, Bozeman, Montana 59717, USA;

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