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Multigate RADFET Dosimeter for Radioactive Environment Monitoring Applications

机译：用于放射性环境监测应用的Multigate RADFET剂量计

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摘要

In this chapter, a new radiation sensitive FET (RADFET) dosimeter design (called the Dual-Dielectric Gate All Around DDGAA RADFET dosimeter) to improve the radiation sensitivity performance and its analytical analysis have been proposed, investigated and expected to improve the sensitivity behavior and fabrication process for RADFET dosimeter-based applications. Analytical models have been developed to predict and compare the performance of the proposed design and conventional (bulk) RADFET, where the comparison of device architectures shows that the proposed design exhibits a superior performance with respect to the conventional RADFET in term of fabrication process and sensitivity performances. The proposed design has linear radiation sensitivities of approximately 95.45 μV/Gy for wide irradiation dose range (from Dose = 50 Gy to Dose = 3000 Gy). Our results showed that the analytical analysis is in close agreement with the 2-D numerical simulation over a wide range of devices parameters. The proposed device and the Artificial Neural Networks (ANNs) have been used to study and show the impact of the proposed dosimeter on the environment monitoring and remote sensing applications. The obtained results make the DDGAA RADFET dosimeter a promising candidate for environment monitoring applications.
机译：在本章中，提出了一种新的辐射敏感FET（RADFET）剂量计设计（称为双电介质栅DDGAA RADFET剂量计），以提高辐射灵敏度性能，并对其分析进行了分析，研究，并有望改善灵敏度行为并提高灵敏度。 RADFET剂量计应用的制造工艺。已经开发出分析模型来预测和比较建议的设计和常规（批量）RADFET的性能，其中器件架构的比较表明，就制造工艺和灵敏度而言，建议的设计相对于常规RADFET表现出优异的性能。表演。对于较宽的辐照剂量范围（从剂量= 50 Gy到剂量= 3000 Gy），建议的设计具有大约95.45μV/ Gy的线性辐射敏感性。我们的结果表明，在广泛的设备参数范围内，分析分析与二维数值模拟非常吻合。拟议的设备和人工神经网络（ANN）已用于研究并显示拟议的剂量计对环境监测和遥感应用的影响。获得的结果使DDGAA RADFET剂量计成为环境监测应用的有希望的候选者。

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