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Large area deposition technique of magnesium oxide thin film for plasma display panel applications

机译:等离子显示面板应用中氧化镁薄膜的大面积沉积技术

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A higher rate deposition sputtering process of magnesium oxide thin film in oxide mode has been developed using a 20 kW unipolar pulsed power supply. The power supply was operated at a maximum constant voltage of 500 V and a constant current of 40 A. The frequency and the duty were changed in the ranges of 10 ~ 50 kHz and 10 ~ 60 %, respectively. The deposition rate increased with increasing incident power to the target. Maximum incident power to the magnesium target was obtained by the control of frequency, duty and current. The deposition rate of a moving state was 9 nm m/min at the average power of 1.5 kW. This result shows higher deposition rate than any other previous work of reactive sputtering at the oxide mode. The thickness uniformities over the whole substrate area of 982 mm x 563 mm were observed at the processing pressure of 2.8 ~ 9.5 mTorr. The thickness distribution was improved at lower pressure.
机译:使用20 kW单极性脉冲电源,已经开发出了以氧化物模式进行的氧化镁薄膜更高速率的沉积溅射工艺。电源在最大恒定电压500 V和恒定电流40 A下工作。频率和占空比分别在10〜50 kHz和10〜60%的范围内变化。沉积速率随靶材入射功率的增加而增加。镁靶的最大入射功率是通过控制频率,占空比和电流来获得的。在1.5kW的平均功率下,运动状态的沉积速率为9nm m / min。该结果显示出比在氧化物模式下反应溅射的任何其他先前工作更高的沉积速率。在2.8〜9.5 mTorr的处理压力下,可观察到整个982 mm x 563 mm基板厚度的均匀性。在较低压力下改善了厚度分布。

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