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首页> 外文会议>ICO20: Display Devices and Systems >Effecting on the spectrum of the blue organic light-emitting diodes by the indium tin oxide surface treatment
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Effecting on the spectrum of the blue organic light-emitting diodes by the indium tin oxide surface treatment

机译：铟锡氧化物表面处理对蓝色有机发光二极管光谱的影响

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Deionized water, sulfur acid (98%) (H_2SO4), sodium hydroxide (NaOH) solution and oxygen plasma are used to treat ITO substrates, then blue organic light emitting devices (OLEDs) with the structure of ITO/NPB(50 nm)/BAlq_3(40 nm)/Alq_3(25 nm)/Mg:Ag are fabricated in the vacuum. The experiment results show that ITO treatments influence the electroluminescence (EL) spectrum of the blue OLEDs, the OLEDs which are treated by four methods the EL spectrums change from 496 to 455 nm. According to atom force microscope (AFM) and X-ray photoelectron spectroscopy (XPS) analysis, the surface morphology and surface composition are greatly changed, so the surface work function is changed, then recombination zone of the carrier is moved, which leading to the emission spectrums alter. The ITO substrate is treated by oxygen plasma, which has the highest oxygen concentration, so the surface work function is the greatest, the hole can jump the barrier and recombine in BAlq_3-Alq_3 interface, the spectral peak is at 496 nm. The ITO treated by acid solution, the oxygen concentration is less than that of plasma treatment, so the surface work function is also less than it, thus the hole can inject into the BAlq_3 layer, the spectral peak is at 480 nm. Roughness of deionized water treated ITO is the largest, which can became local high electric field, so some hole are excitated into the BAlq_3-Alq_3 interface, most of the hole are blocked by BAlq_3 barrier, the light from BAlq_3-Alq_3 interface and NPB layer, the spectral peak is at 474 nm. The ITO treated by NaOH solution, the oxygen concentration is the lowest, so the surface work function is also the lowest, all of the hole are blocked by BAlq_3 layer, they can only recombine in the NPB layer, the spectral peak is at 455 nm.
机译：用去离子水，硫酸（98％）（H_2SO4），氢氧化钠（NaOH）溶液和氧等离子体处理ITO基板，然后使用结构为ITO / NPB（50 nm）/的蓝色有机发光器件（OLED）/在真空中制造BAlq_3（40 nm）/ Alq_3（25 nm）/ Mg：Ag。实验结果表明，ITO处理会影响蓝色OLED的电致发光（EL）光谱，通过四种方法处理的OLED的EL光谱从496 nm变为455 nm。根据原子力显微镜（AFM）和X射线光电子能谱（XPS）分析，表面形貌和表面组成发生了很大变化，因此表面功函数发生了变化，然后载体的复合区发生了移动，从而导致发射光谱改变。 ITO基板用氧浓度最高的氧等离子体处理，因此表面功函数最大，空穴可以跳过势垒并在BAlq_3-Alq_3界面复合，光谱峰在496 nm。经过酸溶液处理的ITO，其氧浓度小于等离子处理的氧浓度，因此表面功函数也小于其，因此空穴可以注入BAlq_3层，光谱峰在480 nm。去离子水处理过的ITO的粗糙度最大，可以变成局部高电场，因此一些空穴被激发进入BAlq_3-Alq_3界面，大部分空穴被BAlq_3势垒，BAlq_3-Alq_3界面和NPB层所阻挡，光谱峰在474nm。用NaOH溶液处理的ITO，氧浓度最低，所以表面功函数也最低，所有的空穴都被BAlq_3层阻挡，它们只能在NPB层中复合，光谱峰在455nm处。

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