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Parasitically Coupled Three Element DRA Array with Reduced Side Lobe Lavel

机译:寄生耦合的三元素DRA阵列,降低旁瓣水平

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A three element E-plane parasitic DRA array partially inserted within a secondary substrate has been realized in this paper for broadside radiation. The proposed DRA array operates from 7.02 GHz to 7.26 GHz and gives broadside radiation pattern with a peak gain of 7.22 dBi. Four metal strips are placed in very close proximity to the DRAs which help to improve the matching as well as decrease the side lobe lavel. Three different arrangement of the array is studied here and from simulations results of S11 and radiation characteristics it is evident that embedded array with metal strips is improved the side lobe lavel almost 3.2 dB in E-plane compared to the isolated array.
机译:本文已经实现了部分插入次级衬底中的三元素E平面寄生DRA阵列,用于宽边辐射。提出的DRA阵列在7.02 GHz至7.26 GHz的频率范围内工作,并给出了具有7.22 dBi峰值增益的宽边辐射方向图。四个金属条非常靠近DRA放置,这有助于改善匹配度并减少旁瓣倾斜度。在这里研究阵列的三种不同排列,并从S \ n 11\n和辐射特性,很明显,与隔离板相比,带有金属条的嵌入式阵列在E平面中将旁瓣片改善了近3.2 dB。数组。

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