Design and application of GaAs MESFET current mirror circuits

机译：GaAs MESFET电流镜电路的设计与应用

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It is well known that the techniques and approaches of circuitndesign are heavily influenced by the fabrication technology involved.nHigh speed Gallium Arsenide (GaAs) technology is generally regarded as anchallenge for circuit designers, principally on account of the lack of anP-channel device, low device gain and, in general, limitation tondepletion mode devices. In this paper, the authors show that, unlikenbipolar technology, GaAs technology using metal semiconductor FETsn(MESFETs) permits the design of a simple fast circuit for the negativencurrent mirror, which has a beneficial effect across a wide range ofncircuit applications

机译：众所周知，电路设计的技术和方法会受到所涉及的制造技术的严重影响。n砷化镓（GaAs）高速技术通常被认为是电路设计人员面临的挑战，主要是因为缺少P沟道器件，低功耗。设备增益，通常是限制tondepletion模式设备。在本文中，作者表明，与双极技术不同，使用金属半导体FET（MESFET）的GaAs技术允许设计用于负电流镜的简单快速电路，这在广泛的n电路应用中均具有有益的效果。

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《IEEE international conference on control and applications : Proceedings》|1989年|p.1/1-1/5|共5页
会议地点 Jerusalem(IL);Jerusalem(IL)
作者
Toumazou C.; Haigh D.G.;
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作者单位

Dept. of Electr. Eng., Imperial Coll., London;

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会议组织
原文格式 PDF
正文语种 eng
中图分类自动控制、自动控制系统;
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专利

1. Design and application of GaAs current mirror circuits [J] . Toumzou C., Haigh D.G. IEE Proceedings. Part G, Circuits, Devices and Systems . 1990,第2期

机译：GaAs电流镜电路的设计与应用
2. A New Broadband Buffer Circuit Technique and Its Application to a 10-Gbit/s Decision Circuit Using Production-Level 0.5 μm GaAs MESFETs [J] . Miyo MIYASHITA, Naoto ANDOH, Kazuya YAMAMOTO IEICE Transactions on Electronics . 1998,第10期

机译：一种新的宽带缓冲电路技术及其在生产水平0.5μmGaAs MESFET的10Gb决策电路中的应用
3. A super-dynamic flip-flop circuit for broad-band applications up to 24 Gb/s utilizing production-level 0.2-/spl mu/m GaAs MESFETs [J] . Otsuji T., Yoneyama M. IEEE Journal of Solid-State Circuits . 1997,第9期

机译：利用生产级0.2- / splμ/ m GaAs MESFET的超动态触发器电路，适用于高达24 Gb / s的宽带应用
4. Design and application of GaAs MESFET current mirror circuits [C] . Toumazou, C., Haigh, . 1989

机译：GaAs MESFET电流镜电路的设计与应用
5. Fabrication, testing and reliability modeling of copper/titanium-metallized GaAs MESFETs and HEMTs for low-noise applications. [D] . Feng, Ting. 1999

机译：用于低噪声应用的铜/钛金属化GaAs MESFET和HEMT的制造，测试和可靠性建模。
6. Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications [O] . Cheng Jiang, Jiqiang Ning, Xiaohui Li, 2019

机译：具有飞秒光纤激光器应用的短周期超晶格封盖结构的1550 nm InAs / GaAs量子点可饱和吸收镜的开发
7. Towards a model of GaAs MESFETs for the design of cryogenic integrated circuits. [O] . Camin D. V., Pessina G., Previtali E., 1994

机译：面向用于低温集成电路设计的GaAs MESFET模型。
8. GaAs MMIC Mixer for 8-12GHz, Based on 0.5 micrometer Gate Length D-MESFETS. Volume 1. Design and Layout (GaAs MMIC Mixer voor 8-12GHz, Gerealiseered Met 0,5 micrometer Gate Lengte D-MESFETS. Deel 1. Ontwerp en Layout). [R] . Tieman, T. C., Grooters, R. 1990

机译：Gaas mmIC混频器，用于8-12GHz，基于0.5微米栅极长度的D-mEsFETs。第1卷。设计和布局（Gaas mmIC混频器，8-12GHz，Gerealiseered met 0,5微米栅极冷却D-mEsFET.selel 1. Ontwerp en Layout）。

Design and application of GaAs MESFET current mirror circuits

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