La-doped ZrO2 based BEoL decoupling capacitors

机译：基于La掺杂的ZrO2的BEoL去耦电容器

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Presented within this paper is a study on thin La-doped ZrO2 films used as dielectric material in decoupling capacitors in BEoL. The effect of combined atomic layer deposition processes and the integration concept of La are discussed with respect to capacitance density, leakage current, breakdown voltage and reliability. Physical characterization helps to understand the measured parameters. Overall, the La-doping is able to improve the breakdown voltage significantly without degrading reliability, but at the expense of increased capacitance density compared to undoped films.

机译：本文介绍的是对BeoL的去耦电容器中用作电介质材料的La掺杂ZrO2薄膜的研究。就电容密度，漏电流，击穿电压和可靠性，讨论了组合的原子层沉积工艺的影响和La的集成概念。物理特性有助于了解测量的参数。总体而言，La掺杂能够在不降低可靠性的情况下显着提高击穿电压，但与未掺杂的薄膜相比，其代价是电容密度的增加。

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来源
《IEEE Joint Conference: International Conference on IC Design and Technology amp; Solid State Systems Symposium》|2016年|1-4|共4页
会议地点 Ho Chi Minh City(VN)
作者
W. Weinreich; K. Seidel; P. Polakowski; M. Drescher; A. Gummenscheimer; M. G. Nolan; L. Cheng; D. H. Triyoso;
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作者单位

Fraunhofer IPMS-CNT Dresden, Germany;

Fraunhofer IPMS-CNT Dresden, Germany;

Fraunhofer IPMS-CNT Dresden, Germany;

Fraunhofer IPMS-CNT Dresden, Germany;

GLOBALFOUNDRIES, Dresden, Germany;

GLOBALFOUNDRIES, Dresden, Germany;

GLOBALFOUNDRIES, Malta, USA;

GLOBALFOUNDRIES, Malta, USA;

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原文格式 PDF
正文语种 eng
中图分类
关键词
Capacitance; Films; MIM capacitors; Laminates; Capacitors; Semiconductor device reliability;

机译：电容;薄膜; MIM电容器;层压板;电容器;半导体器件的可靠性;

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专利

1. High-performance metal-insulator-metal capacitor with Ge-stabilized tetragonal ZrO2/amorphous La-doped ZrO2 dielectric [J] . Yung-Hsien Wu Chia-Chun Lin Lun-Lun Chen Yao-Chung Hu Jia-Rong Wu and Min-Lin Wu Applied Physics Letteres . 2011,第1期

机译：具有Ge稳定的四方ZrO2 /非晶La掺杂ZrO2电介质的高性能金属-绝缘体-金属电容器
2. Enhanced reliability and capacitance stability of ZrO2-based decoupling capacitors by interface doping with Al2O3 [J] . Mart C., Zybell S., Riedel S., Microelectronic Engineering . 2017,第juna期

机译：通过Al2O3界面掺杂增强基于ZrO2的去耦电容器的可靠性和电容稳定性
3. Electrical Properties of Sputter-deposited ZrO2-based Pt/ZrO2/Si Capacitors [J] . Keunbin YIM, Yeonkyn PARK, Anna PARK Journal of Materials Science & Technology . 2006,第6期

机译：溅射沉积ZrO2基Pt / ZrO2 / Si电容器的电性能
4. La-doped ZrO2 based BEoL decoupling capacitors [C] . W. Weinreich, K. Seidel, P. Polakowski, Solid State Systems Symposium . 2016

机译：基于La-掺杂的ZrO2 BEOL解耦电容器
5. Effective distance calculations for on-chip decoupling capacitors in 3-D integrated circuits. [D] . Mungi, Sateja Sunil. 2013

机译：3-D集成电路中片上去耦电容器的有效距离计算。
6. Dimensional stability and electrochemical behaviour of ZrO2 incorporated electrospun PVdF-HFP based nanocomposite polymer membrane electrolyte for Li-ion capacitors [O] . Arun Kumar Solarajan, Vignesh Murugadoss, Subramania Angaiah -1

机译：掺ZrO2的静电纺PVdF-HFP基锂离子电容器纳米复合聚合物膜电解质的尺寸稳定性和电化学行为
7. Dimensional stability and electrochemical behaviour of ZrO2 incorporated electrospun PVdF-HFP based nanocomposite polymer membrane electrolyte for Li-ion capacitors [O] . Arun Kumar Solarajan, Vignesh Murugadoss, Subramania Angaiah 2017

机译：ZrO2掺入的锂离子电容器纳米复合材料高分子聚合物膜电解质尺寸稳定性与电化学性能

La-doped ZrO2 based BEoL decoupling capacitors

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