Improved electrical and thermal performances in nanostructured GaN devices

机译：改善纳米GaN器件的电学和热学性能

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摘要

Electrical and thermal performances were enhanced for AlGaN/GaN Schottky barrier diodes (SBDs) using a nanostructured anode technology. The fabricated SBDs presented small turn-on voltage of 0.95 V, large output current density over 1 A/mm, low reverse leakage current below 1 nA/mm and diminished self-heating. Additionally, the nanostructured electrode greatly reduced the thermal resistance of the device by about 50% and hence improved the thermal performance of GaN SBDs as well as transistors. Furthermore, geometry of the nanostructured electrode had a large impact on device performance, which was presented and analyzed in this work.

机译：使用纳米结构阳极技术提高了AlGaN / GaN肖特基势垒二极管（SBD）的电气和热性能。制成的SBD具有0.95 V的小接通电压，超过1 A / mm的大输出电流密度，低于1 nA / mm的低反向漏电流以及自发热降低。另外，纳米结构电极大大降低了器件的热阻约50％，因此改善了GaN SBD和晶体管的热性能。此外，纳米结构电极的几何形状对器件性能有很大的影响，在这项工作中对此进行了介绍和分析。

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来源
《IEEE Joint Conference: International Conference on IC Design and Technology amp; Solid State Systems Symposium》|2016年|1-4|共4页
会议地点 Ho Chi Minh City(VN)
作者
Jun Ma; Elison Matioli;
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作者单位

Power and Wide-band-gap Electronics Research Laboratory (POWERlab), CH-1015 Lausanne, Switzerland;

Ecole polytechnique fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland;

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原文格式 PDF
正文语种 eng
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关键词
HEMTs; Aluminum gallium nitride; Wide band gap semiconductors; Nanowires; Gallium nitride; MODFETs; Logic gates;

机译：HEMT;氮化铝镓;宽带隙半导体;纳米线;氮化镓; MODFET;逻辑门;

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1. Impact of thinning the GaN buffer and interface layer on thermal and electrical performance in GaN-on-diamond electronic devices [J] . Middleton Callum, Chandrasekar Hareesh, Singh Manikant, Applied physics express . 2019,第2期

机译：变薄GaN缓冲层和界面层对GaN-on-Diamond电子器件中热和电性能的影响
2. Sensing devices based on ZnO hexagonal tube-like nanostructures grown on p-GaN heterojunction by wet thermal evaporation [J] . H.I. Abdulgafour, Z. Hassan, F.K. Yam, Thin Solid Films . 2013,第jula1期

机译：基于湿热蒸发在p-GaN异质结上生长的ZnO六角形管状纳米结构的传感装置
3. High-temperature electrical performances and physics-based analysis of p-GaN HEMT device [J] . Power Electronics, IET . 2020,第3期

机译：p-GaN HEMT器件的高温电性能和基于物理的分析
4. Improved electrical and thermal performances in nanostructured GaN devices [C] . Jun Ma, Elison Matioli Solid State Systems Symposium . 2016

机译：纳米结构GaN器件中的改善电气和热性能
5. Impact of electrically and thermally induced physical defects on the reliability of AlGaN/GaN high electron mobility transistors. [D] . Holzworth, Monta Raymond, Jr. 2013

机译：电和热感应物理缺陷对AlGaN / GaN高电子迁移率晶体管的可靠性的影响。
6. AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics [O] . Justinas Jorudas, Artūr Šimukovič, Maksym Dub, 2020

机译：Algan / GaN在没有GaN缓冲层的SIC器件上：电气和噪声特性
7. Improved electrical and thermal performances in nanostructured GaN devices [O] . Jun Ma, Elison Matioli 2016

机译：纳米结构GaN器件中的改善电气和热性能
8. Growth of Low Defect Density Gallium Nitride (GaN) Films on Novel Tantalum Carbide (TaC) Substrates for Improved Device Performance [R] . Derenge, M. A., Jones, K. A., Kirchner, K. W., 2009

机译：新型碳化钽（TaC）衬底上低缺陷密度氮化镓（GaN）薄膜的生长，提高器件性能

Improved electrical and thermal performances in nanostructured GaN devices

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