Beyond-Si materials and devices for more Moore and more than Moore applications

机译：Beyond-Si材料和器件可提供更多的摩尔定律，而不仅仅是摩尔定律的应用

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In this work, we will review the current progress in high mobility devices and new device architectures. With main focus on (Si)Ge for pMOS and In(Ga)As for nMOS, the benefits and challenges of integrating these materials on a Si platform will be discussed. Next to that, the advantages of tunnel FETs, vertical logic and in general heterogeneous integration will be highlighted.

机译：在这项工作中，我们将回顾高移动性设备和新设备体系结构的当前进展。主要针对pMOS的（Si）Ge和nMOS的In（Ga）As，将讨论在Si平台上集成这些材料的好处和挑战。除此之外，隧道FET，垂直逻辑和一般异构集成的优势也将得到强调。

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来源
《IEEE Joint Conference: International Conference on IC Design and Technology amp; Solid State Systems Symposium》|2016年|1-5|共5页
会议地点 Ho Chi Minh City(VN)
作者
N. Collaert; A. Alian; H. Arimura; G. Boccardi; G. Eneman; J. Franco; Ts. Ivanov; D. Lin; J. Mitard; S. Ramesh; R. Rooyackers; M. Schaekers; A. Sibaya-Hernandez; S. Sioncke; Q. Smets; A. Vais; A. Vandooren; A. Veloso; A. Verhulst; D. Verreck; N. Waldron; A. Walke; L. Witters; H;
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Imec, Kapeldreef 75, 3001 Heverlee, Belgium;

Imec, Kapeldreef 75, 3001 Heverlee, Belgium;

Imec, Kapeldreef 75, 3001 Heverlee, Belgium;

Imec, Kapeldreef 75, 3001 Heverlee, Belgium;

Imec, Kapeldreef 75, 3001 Heverlee, Belgium;

Imec, Kapeldreef 75, 3001 Heverlee, Belgium;

Imec, Kapeldreef 75, 3001 Heverlee, Belgium;

Imec, Kapeldreef 75, 3001 Heverlee, Belgium;

Imec, Kapeldreef 75, 3001 Heverlee, Belgium;

Imec, Kapeldreef 75, 3001 Heverlee, Belgium;

Imec, Kapeldreef 75, 3001 Heverlee, Belgium;

Imec, Kapeldreef 75, 3001 Heverlee, Belgium;

Imec, Kapeldreef 75, 3001 Heverlee, Belgium;

Imec, Kapeldreef 75, 3001 Heverlee, Belgium;

Imec, Kapeldreef 75, 3001 Heverlee, Belgium;

Imec, Kapeldreef 75, 3001 Heverlee, Belgium;

Imec, Kapeldreef 75, 3001 Heverlee, Belgium;

Imec, Kapeldreef 75, 3001 Heverlee, Belgium;

Imec, Kapeldreef 75, 3001 Heverlee, Belgium;

Imec, Kapeldreef 75, 3001 Heverlee, Belgium;

Imec, Kapeldreef 75, 3001 Heverlee, Belgium;

Imec, Kapeldreef 75, 3001 Heverlee, Belgium;

Imec, Kapeldreef 75, 3001 Heverlee, Belgium;

Imec, Kapeldreef 75, 3001 Heverlee, Belgium;

Imec, Kapeldreef 75, 3001 Heverlee, Belgium;

Imec, Kapeldreef 75, 3001 Heverlee, Belgium;

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原文格式 PDF
正文语种 eng
中图分类
关键词
Silicon; Logic gates; TFETs; Performance evaluation; III-V semiconductor materials; CMOS integrated circuits;

机译：硅;逻辑门; TFET;性能评估; III-V类半导体材料; CMOS集成电路;

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2. Evolution of Total Ionizing Dose Effects in MOS Devices With Moore’s Law Scaling [J] . Daniel M. Fleetwood IEEE Transactions on Nuclear Science . 2018,第8期

机译：摩尔定律在MOS器件中总电离剂量效应的演变
3. A Moore?s Law for Mobile Energy: Improving upon conventional batteries and energy sources for mobile devices [J] . Coughlin T., Future Directions Committee I. Consumer Electronics Magazine, IEEE . 2015,第1期

机译：摩尔定律的移动能源：改进传统电池和移动设备的能源
4. Beyond-Si materials and devices for more Moore and more than Moore applications [C] . N. Collaert, A. Alian, H. Arimura, Solid State Systems Symposium . 2016

机译：超越SI材料和设备，用于更多摩尔和摩尔应用
5. Compact Modeling of Layered Materials Transistors for More-Than-Moore Applications [D] . Yarmoghaddam, Elahe. 2020

机译：适用于多于摩尔应用的层状材料晶体管的紧凑型
6. Development of Moore Swab and Ultrafiltration Concentration and Detection Methods for Salmonella Typhi and Salmonella Paratyphi A in Wastewater and Application in Kolkata India and Dhaka Bangladesh [O] . Pengbo Liu, Makoto Ibaraki, Renuka Kapoor, 2021

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7. Device and integration technologies for VLSI in post-Moore era [O] . Ming LI, Ru HUANG 2018

机译：后摩尔时代VLSI的设备和集成技术

Beyond-Si materials and devices for more Moore and more than Moore applications

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