首页> 外文会议>IEEE Lester Eastman Conference on High Performance Devices; 20040804-06; Rensselaer Polytechnic Institute >ANALYSIS OF OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FOR APPLICATION IN GHz FREQUENCY RANGE
【24h】

ANALYSIS OF OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FOR APPLICATION IN GHz FREQUENCY RANGE

机译:适用于GHz频率范围的工作导通放大器分析

获取原文
获取原文并翻译 | 示例

摘要

Operational Transconductance Amplifier (OTA) is an excellent current mode device suited very well for VLSI implementation. In this contribution we report realization of OTA using Silicon-On-Insulator (SOI) structure based MOSFETs and compared them to OTA designed with bulk MOS-FET. SOI based OTA outperformed bulk MOSFET OTA giving close to 10 GHz improvement in high frequency f_T. A band-pass filter was implemented with SOI based OTA with a center frequency of 7 GHz and a bandwidth of 480 kHz.
机译:运算跨导放大器(OTA)是一种出色的电流模式器件,非常适合VLSI实现。在此贡献中,我们报告了使用基于绝缘体上硅(SOI)结构的MOSFET实现OTA的情况,并将其与采用体MOS-FET设计的OTA进行了比较。基于SOI的OTA优于整体MOSFET OTA,在高频f_T方面可提高近10 GHz。通过基于SOI的OTA实现带通滤波器,其中心频率为7 GHz,带宽为480 kHz。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号