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首页> 外文会议>IMAPS 2008 - 41st international symposium on microelectronics: bringing together the entire microelectronics supply chain >Deposition of Ba_(1-x)Ca_xTi_(1-y)Zr_yO_3 Films on HR-Si Substrate Using RF Sputtering by Design of Experiment Method
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Deposition of Ba_(1-x)Ca_xTi_(1-y)Zr_yO_3 Films on HR-Si Substrate Using RF Sputtering by Design of Experiment Method

机译：实验方法设计在RF-Si衬底上沉积Ba_（1-x）Ca_xTi_（1-y）Zr_yO_3薄膜

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In this paper, the optimization compositions of Ba_(1-x)Ca_xTi_(1-y)Zr_yO_3 (BCZT) films doping yttrium were obtained characteristic of low loss and high dielectric constant using design of experiment (DOE) method at microwave frequency region. The BCZT films were physical deposited using RF magnetron sputtering system on LaNiO_3 (LNO)/Au/Ti/SiO_2/HR-Si substrate which is MIM structure. The LaNiO3 buffer layer was enhanced (100) direction growth of the BCTZ films, and high resistivity silicon was used to inhibit substrate loss. Design the Ba_(1-x)Ca_xTi_(1-y)Zr_yO_3 mole fraction range between x = 0～0.1 and y = 0.1～0.25, were discussed the different compositions of Ca and Zr to influence the electrical properties of the films and measured the microwave characteristic using circular-path capacitor structure and a loss corrected model. The ferroelectric films conditions as adding 10 mol% Ca, 25mol% Zr , and Y doping 3 at% at deposited temperature at 600℃, the excellence dielectric properties which dielectric constant is 91 and lowest dielectric loss is 0.055 were appeared at 2.45GHz. The film crystal structures were determined using the X-ray diffraction (XRD) and the microstructure were obtained using field-emission scanning electron microscopy (FE-SEM). The microwave dielectric properties were investigated by Agilent E8364A network analyzer with probe station.
机译：本文通过实验设计（DOE）方法在微波频域下获得了Ba_（1-x）Ca_xTi_（1-y）Zr_yO_3（BCZT）掺杂钇薄膜的优化组成，该薄膜具有低损耗和高介电常数的特性。使用RF磁控溅射系统在MIM结构的LaNiO_3（LNO）/ Au / Ti / SiO_2 / HR-Si衬底上物理沉积BCZT膜。 LaNiO3缓冲层增强了BCTZ膜的（100）方向生长，并且使用高电阻率的硅来抑制基板损耗。设计Ba_（1-x）Ca_xTi_（1-y）Zr_yO_3的摩尔分数范围为x = 0〜0.1和y = 0.1〜0.25，讨论了Ca和Zr的不同组成对薄膜电学性能的影响并进行了测量。使用圆形路径电容器结构和损耗校正模型的微波特性。铁电薄膜的条件是在600℃的沉积温度下加入10 mol％的Ca，25 mol％的Zr和Y掺杂3 at％，在2.45GHz时表现出优异的介电性能，介电常数为91，最低介损为0.055。使用X射线衍射（XRD）确定薄膜晶体结构，并使用场发射扫描电子显微镜（FE-SEM）获得微观结构。微波介电性能通过带有探针台的Agilent E8364A网络分析仪进行了研究。

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