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Thermal Stress Analysis in a Multilayer Power Module

机译:多层电源模块中的热应力分析

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The focus of this work is to analyze the thermo-mechanical stresses in Multi-Chip Power Module (MCPM) systemsrnbeing developed for high-temperature power electronics applications. Silicon Carbide (SiC) based electronics showrnconsiderable promise for demanding applications (hybrid electric commercial and combat vehicles, interplanetaryrnexploration, power distribution, etc.) in part due to its capability to withstand temperatures upwards of 600℃.rnWhile high-temperature SiC based systems are an enabling technology for a wide range of applications, the harshrnconditions introduce exceedingly high thermally-induced stresses in the system due to the coefficient of thermalrnexpansion (CTE) mismatches between the different materials in the structure. High thermal stresses in the die orrnsolder interface may result in peeling or fracturing, and thus are a major reliability concern for these systems. Thisrnpaper investigates the case of a single SiC device bonded to a thick metal power substrate using a variety of solderrnalloys. Analytical models and Finite Element analysis (FEA) software is employed to evaluate the shear stress,rnpeeling stress, and normal stress examined over temperatures ranging from 25 to 700℃. Multiple solderrnthicknesses and die geometries are analyzed in order to determine an optimal bond line. The FEA results arerncompared to several well adopted analytical approaches for comparison. In addition, methods to reduce the overallrnstresses are presented.
机译:这项工作的重点是分析为高温电力电子应用开发的多芯片功率模块(MCPM)系统中的热机械应力。基于碳化硅(SiC)的电子产品在苛刻的应用(混合动力电动和战车,行星际探测,配电等)中显示出巨大的前景,部分原因是其能够承受高达600℃的温度。作为一种广泛应用的使能技术,由于结构中不同材料之间的热膨胀系数(CTE)不匹配,因此苛刻的条件会在系统中引入极高的热诱导应力。模具或焊接机界面中的高热应力可能会导致剥离或破裂,因此是这些系统的主要可靠性问题。本文研究了使用多种焊锡合金将单个SiC器件粘合到厚金属电源基板上的情况。使用分析模型和有限元分析(FEA)软件评估在25至700℃温度范围内检查的剪切应力,剥离应力和正应力。为了确定最佳的粘合线,需要分析多种焊接厚度和芯片几何形状。有限元分析的结果与几种比较好的分析方法进行了比较。此外,提出了减少总体应力的方法。

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