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Reaction Bonded Silicon Carbide Materials with Favorable Properties for Thermal Management Applications

机译:具有良好性能的反应结合碳化硅材料,用于热管理应用

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Composites of silicon carbide (SiC) and silicon (Si) are fabricated by the reactive infiltration of molten Si into preforms of SiC particles and carbon. This product is often referred to as reaction bonded silicon carbide (RBSC). SiC materials are used in many applications due to their favorable properties including high hardness, high thermal conductivity, low thermal expansion and high stiffness. RBSC has the ability to closely match the coefficient of thermal expansion (CTE) of many low CTE components, such as Si-based semiconductor devices and optical devices. This study shows that by incorporating aluminum (Al) and/or titanium (Ti) into the composite, the thermal expansion becomes tailorable, allowing CTE match with Al_2O_3 and AlN based components. Moreover, these alloy additions provide increased thermal conductivity. Additions of Ti and/or Al to these composites can raise the thermal conductivity more than 10 %, while keeping most of the favorable properties of standard RBSC. Herein, the properties of Si:SiC, Al-Si:SiC and Ti-Si/SiC composites are compared, and possible thermal management applications are explored. Properties evaluated include density, Young's modulus, specific heat, thermal diffusivity, thermal conductivity, and thermal expansion. (Si, SiC, RBSC, Thermal Conductivity, Thermal Expansion, Composite).
机译:碳化硅(SiC)和硅(Si)的复合材料是通过熔融硅反应渗透到SiC颗粒和碳的预成型坯中而制成的。该产品通常称为反应结合碳化硅(RBSC)。 SiC材料由于其良好的特性而被用于许多应用中,包括高硬度,高导热率,低热膨胀性和高刚度。 RBSC具有紧密匹配许多低CTE组件(例如基于Si的半导体器件和光学器件)的热膨胀系数(CTE)的能力。这项研究表明,通过将铝(Al)和/或钛(Ti)掺入复合材料,热膨胀变得可定制,从而允许CTE与Al_2O_3和AlN基成分匹配。而且,这些合金添加物提供增加的热导率。向这些复合材料中添加Ti和/或Al可以使导热率提高10%以上,同时保留了标准RBSC的大多数有利性能。在此,比较了Si:SiC,Al-Si:SiC和Ti-Si / SiC复合材料的性能,并探讨了可能的热管理应用。评估的特性包括密度,杨氏模量,比热,热扩散系数,导热系数和热膨胀。 (Si,SiC,RBSC,导热系数,热膨胀,复合材料)。

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