Efficient Gate Drive Mechanism for Novel Silicon Carbide Power FETs

机译：新型碳化硅功率FET的高效栅极驱动机制

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A novel method for driving high side switch of a synchronous rectifier is described. A gate drive mechanism with signal and power transfer through coreless planar transformer is presented. The transformer is implemented in commercial polyimide printed circuit board technology in an area of 13 mm × 13mm. Enhancement mode silicon carbide junction field effect transistors and a custom designed silicon-on-insulator based controller chip are used in conjunction with the gate drive transformers to establish their functionality and performance. A design procedure based on transfer function analysis is presented. The proposed drive mechanism is applicable for extremely wide temperature range operation.

机译：描述了一种用于驱动同步整流器的高压侧开关的新颖方法。提出了一种通过无芯平面变压器进行信号和功率传输的栅极驱动机制。该变压器采用商用聚酰亚胺印刷电路板技术实现，面积为13 mm×13mm。增强模式碳化硅结场效应晶体管和定制设计的基于绝缘体上硅的控制器芯片与栅极驱动变压器一起使用，以建立其功能和性能。提出了基于传递函数分析的设计程序。建议的驱动机制适用于极宽的温度范围操作。

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来源
《IMAPS 2008 - 41st international symposium on microelectronics: bringing together the entire microelectronics supply chain》|2008年|p.001126-001133|共8页
会议地点 Providence RI(US);Providence RI(US)
作者
Vijayaraghavan Madhuravasal; Pratibha Kota; Chriswell Hutchens;
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作者单位

Oklahoma State University, 202 Engineering South, Stillwater OK 74078 Email: vijaygmad@yahoo.com;

rnOklahoma State University, 202 Engineering South, Stillwater OK 74078;

rnOklahoma State University, 202 Engineering South, Stillwater OK 74078;

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会议组织
原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;
关键词
gate drive; smps; PCB transformer; silicon carbide; PCB; verilog-A; JFET;

机译：门驱动短信PCB变压器碳化硅PCB; verilog-A;场效应管;

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3. Experimental and numerical analysis of the multi-recessed gate structure for microwave silicon carbide power MESFETs [J] . Deng Xiao-Chuan, Feng Zhen, Zhang Bo, 中国物理：英文版 . 2009,第007期

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4. Efficient Gate Drive Mechanism for Novel Silicon Carbide Power FETs [C] . International symposium on microelectronics . 2008

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6. Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix [O] . Zhenyu Wan, Shujuan Huang, Martin A Green, 2011

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Efficient Gate Drive Mechanism for Novel Silicon Carbide Power FETs

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