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首页> 外文会议>IMAPS 40th international symposium on microelectronics >Aluminum Migration on the Die Surfaces of a Power Transistor in High-Intensity Electric Fields
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Aluminum Migration on the Die Surfaces of a Power Transistor in High-Intensity Electric Fields

机译：高强度电场中功率晶体管管芯表面的铝迁移

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This paper presents the results of an investigation on a phenomenon of aluminum migration across a 50 micron semi-insulation gap on the die surface of a power silicon transistor under a high-intensity electric field. The transistor is manufactured using a typical planar process with aluminum as the metallization material. The electric field is induced by a reverse bias of over 500V across the 50 micron semi-insulation gap between the collector and the base. A preliminary energy dispersive x-ray (EDX) analysis has verified the migration material of aluminum. rnIt is clear that this migration described above is not the so-called electromigration, a process that takes place under the condition of high-density current when significant momentum transfer occurs from moving charge carriers to crystal lattice. The investigation results obtained in this preliminary study also indicate that this migration is different from the electrochemical migration, because no evidence has so far been found that moisture and the existence of electrolyte is noticeably a necessary condition for the occurrence of the migration. In addition, the existence of a lower threshold voltage observed in the study for this migration phenomenon is not considered a necessary condition for electrochemical migration either. rnThis paper presents a preliminary study to verify the chemical composition of the substances involved in the migration process, and to identify the environmental conditions of temperature and relative humidity, as well as the electric field and reverse bias conditions necessary to initiate the migration process. The migration process will also be characterized under different conditions in this study to provide information for reliability modeling and failure prediction in follow-up studies.
机译：本文介绍了研究铝在高强度电场下穿过功率硅晶体管管芯表面上的50微米半绝缘间隙迁移现象的结果。使用典型的平面工艺以铝作为金属化材料来制造晶体管。在集电极和基极之间的50微米半绝缘间隙上，通过超过500V的反向偏置来感应电场。初步的能量色散X射线（EDX）分析已经验证了铝的迁移材料。显然，上述迁移不是所谓的电迁移，它是在高密度电流条件下发生的过程，当从移动的载流子到晶格发生明显的动量转移时。在该初步研究中获得的研究结果还表明，这种迁移与电化学迁移不同，因为迄今为止尚未发现任何证据表明水分和电解质的存在是发生迁移的必要条件。另外，在研究中观察到的针对该迁移现象的较低阈值电压的存在也不被认为是电化学迁移的必要条件。 rn本文提出了一项初步研究，以验证参与迁移过程的物质的化学组成，并确定温度和相对湿度的环境条件，以及启动迁移过程所需的电场和反向偏置条件。在本研究中，还将在不同条件下表征迁移过程，以为后续研究中的可靠性建模和故障预测提供信息。

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