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首页> 外文会议>Infrared Detectors and Focal Plane Arrays VIII >Quantum wells to quantum dots: 640x512 pixels Long-Wavelength Infrared (LWIR) Quantum Dot Infrared Photodetector (QDIP) imaging focal plane array
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Quantum wells to quantum dots: 640x512 pixels Long-Wavelength Infrared (LWIR) Quantum Dot Infrared Photodetector (QDIP) imaging focal plane array

机译：量子阱至量子点：640x512像素长波长红外（LWIR）量子点红外光电探测器（QDIP）成像焦平面阵列

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摘要

We have exploited the artificial atom-like properties of epitaxially grown self-assembled quantum dots (QDs) for the development of high operating temperature long wavelength infrared (LWIR) focal plane arrays (FPAs). QD infrared photodetectors (QDIPs) are expected to outperform quantum well infrared detectors (QWIPs) and are expected to offer significant advantages over Ⅱ-Ⅵ material based FPAs. We have used molecular beam epitaxy (MBE) technology to grow multi-layer LWIR Dot-in-a-Well (DWELL) structures based on the InAs/InGaAs/GaAs material system. This hybrid quantum dot/quantum well device offers additional control in wavelength tuning via control of dot-size and/or quantum well sizes. DWELL QDIPs were also experimentally shown to absorb both 45o and normally incident light. Thus we have employed a reflection grating structure to further enhance the quantum efficiency. The most recent devices exhibit peak responsivity out to 8.1 microns. Peak detectivity of the 8.1 μm devices has reached ～ 1 x 1010 Jones at 77 K. Furthermore, we have fabricated the first long-wavelength 640x512 pixels QDIP imaging FPA. This QDIP FPA has produced excellent infrared imagery with noise equivalent temperature difference of 40 mK at 60K operating temperature.
机译：我们已经利用外延生长的自组装量子点（QDs）的人工原子样特性来开发高工作温度长波长红外（LWIR）焦平面阵列（FPA）。 QD红外光电探测器（QDIP）有望胜过量子阱红外探测器（QWIP），并且有望比基于Ⅱ-Ⅵ材料的FPA提供显着优势。我们已经使用分子束外延（MBE）技术来生长基于InAs / InGaAs / GaAs材料系统的多层LWIR井中点（DWELL）结构。这种混合量子点/量子阱设备通过控制点尺寸和/或量子阱尺寸，在波长调谐方面提供了额外的控制。 DWELL QDIPs还通过实验证明可以吸收45o和垂直入射光。因此，我们采用了反射光栅结构来进一步提高量子效率。最新的设备显示出高达8.1微米的峰值响应度。 8.1μm器件的峰值检测率在77 K时达到了约1 x 1010 Jones。此外，我们还制作了第一个640x512像素长波长QDIP成像FPA。这款QDIP FPA产生了出色的红外图像，在60K的工作温度下，噪声等效温度差为40 mK。

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