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首页> 外文会议>Infrared spaceborne remote sensing and instrumentation XVI >Very high performance LWIR and VLWIR Type-II InAs/GaSb superlattice photodiodes with M-structure barrier
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Very high performance LWIR and VLWIR Type-II InAs/GaSb superlattice photodiodes with M-structure barrier

机译：具有M结构势垒的超高性能LWIR和VLWIR II型InAs / GaSb超晶格光电二极管

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摘要

LWIR and VLWIR type II InAs/GaSb superlattice photodetectors have for long time suffered from a high dark current level and a low dynamic resistance which hampers the its emergence to the infrared detection and imaging industry. However, with the use of M-structure superlattice, a new type II binary InAs/GaSb/AlSb superlattice design, as an effective blocking barrier, the dark current in type II superlattice diode has been significantly reduced. We have obtained comparable differential resistance product to the MCT technology at the cut-off wavelength of 10 and 14(jm. Also, this new design is compatible with the optical optimization scheme, leading to high quantum efficiency, high special detectivity devices for photon detectors and focal plane arrays.
机译：LWIR和VLWIR II型InAs / GaSb超晶格光电探测器长期以来一直遭受着高暗电流水平和低动态电阻的困扰，这阻碍了其在红外探测和成像行业中的出现。但是，通过使用M结构超晶格（一种新型的II型二元InAs / GaSb / AlSb超晶格设计）作为有效的阻挡势垒，II型超晶格二极管中的暗电流已显着降低。我们已经获得了在10和14（jm的截止波长）处可与MCT技术相媲美的差分电阻产品。此外，该新设计与光学优化方案兼容，从而实现了高量子效率，高光子探测器专用检测装置和焦平面阵列。

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  • 来源
  • 会议地点 San Diego CA(US)
  • 作者

    Binh-Minh Nguyen; Darin Hoffman; Pierre-Yves Delaunay; Edward Kwei-wei Huang; Manijeh Razeghi;

  • 作者单位

    Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208;

    Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208;

    Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208;

    Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208;

    Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 V443.5;
  • 关键词

    type-II superlattice; InAs; GaSb; m-structure; focal plane array; LWIR; VLWIR;

    机译：II型超晶格InAs;砷化镓; m结构焦平面阵列； LWIR;超长红外;

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