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首页> 外文会议>Infrared systems and photoelectronic technology IV >Infrared Focal Plane Array Technology Utilizing HgCdTe/Si: Successes, Roadblocks, and Material Improvements
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Infrared Focal Plane Array Technology Utilizing HgCdTe/Si: Successes, Roadblocks, and Material Improvements

机译：利用HgCdTe / Si的红外焦平面阵列技术：成功，障碍和材料改进

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摘要

Mercury Cadmium Telluride (HgCdTe) is the material of choice for the majority of high performance infrared focal plane array (IRFPA) systems fielded in the Army with state-of-the-art HgCdTe growth using a bulk Cadmium Zinc Telluride (CdZnTe) substrate. However, as the push for larger array sizes continues, it has been recognized that an alternative substrate technology will be required for HgCdTe IRFPAs. A major effort has been placed in developing CdTe/Si as such a substrate. Although successful for short-wavelength (SWIR) and mid-wavelength (MWIR) focal plane arrays, current HgCdTe/Si material quality is insufficient for long-wavelength (LWIR) arrays due to the high density of dislocations present in the material. In this paper, we will discuss several processes being developed at the U.S. Army Research Laboratory (ARL) to overcome this issue. Effort has been placed on both composite substrate development and improvement, and on HgCdTe/Si post-growth processes. Recently, we have demonstrated HgCdTe/Si material with dislocation density measuring 1 × 10~6 cm~(-2). This is a five times reduction in the baseline material dislocation density currently used in the fabrication of devices.
机译：碲化汞（HgCdTe）是陆军中采用高性能HgCdTe的大多数高性能红外焦平面阵列（IRFPA）系统的首选材料，该系统使用块状碲化锌锌（CdZnTe）衬底进行生长。但是，随着对更大阵列尺寸的推动不断，人们已经认识到HgCdTe IRFPA将需要替代的基板技术。在开发作为这种衬底的CdTe / Si方面已付出了巨大的努力。尽管对于短波长（SWIR）和中波长（MWIR）焦平面阵列而言是成功的，但是由于材料中存在的高位错密度，当前的HgCdTe / Si材料质量对于长波长（LWIR）阵列而言是不够的。在本文中，我们将讨论美国陆军研究实验室（ARL）正在开发的几种解决此问题的方法。已经致力于复合衬底的开发和改进以及HgCdTe / Si的生长后工艺。最近，我们证明了位错密度为1×10〜6 cm〜（-2）的HgCdTe / Si材料。这是目前在器件制造中使用的基线材料位错密度的五倍降低。

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