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Quadrant photodiode for electronic processing

机译：象限光电二极管，用于电子处理

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摘要

In this work, a photodiode for the visible spectral range, which will be integrated monolithically with CMOS circuits, is presented. Such Optoelectronic Integrated Circuit (OEIC) with high sensitivity in the 400-900 nm spectral range is utilized to realize electronic processing from the light beam position that hit a specific area of the photodetector. The output signals with voltages of 0V and 3 V can be implemented with a controller circuit. By the Using of He-Ne Laser at 633 nm as incident light, the responsivity of the Position Sense Photodetector (PSPD) was 0.35 AAV and the rise and fall time of less than 30 ns were achieved. These parameters were necessaries to achieve the photodiode integration in an industrial 0.5 urn CMOS process, only additional mask was needed in order to block out the threshold voltage implantation in the photo-active region. Therefore both designs of photodiode and the electronic processing circuit separately, are shown here, all design will be integrated monolithically in the same Silicon chip.
机译：在这项工作中，提出了一种可见光谱范围的光电二极管，它将与CMOS电路单片集成。这种在400-900 nm光谱范围内具有高灵敏度的光电集成电路（OEIC）用于实现从撞击光电探测器特定区域的光束位置进行电子处理。电压为0V和3 V的输出信号可以通过控制器电路实现。通过使用633 nm的He-Ne激光器作为入射光，位置感应光电探测器（PSPD）的响应度为0.35 AAV，上升和下降时间均小于30 ns。这些参数是在工业0.5微米CMOS工艺中实现光电二极管集成所必需的，仅需要额外的掩膜即可阻挡光敏区域中的阈值电压注入。因此，此处分别显示了光电二极管和电子处理电路的两种设计，所有设计将单片集成在同一硅芯片中。

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