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首页> 外文会议>Inorganic thin films and coatings >Dielectric and Ferroelectric Properties of Er_2O_3-doped Bi_4Ti_3O_(12) Thin Films
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Dielectric and Ferroelectric Properties of Er_2O_3-doped Bi_4Ti_3O_(12) Thin Films

机译：Er_2O_3掺杂Bi_4Ti_3O_（12）薄膜的介电和铁电性能

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摘要

Er_2O_3-doped bismuth titanate (Bi_(4-x)Er_xTi_3O_(12), BET) and pure Bi_4Ti_3O_(12) (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO_2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. Er-doping into BIT caused a large shift of the Curie temperature ( Tc ) from 675℃ to lower temperature and a improvement in dielectric property. The experimental results indicated that Er doping into BIT also result in a remarkable improvement in ferroelectric property. The P_r and the E_c values of the BET film with x=0.75 were 21 μC/cm~2 and 80 kV/cm, respectively.
机译：通过射频磁控溅射技术在Pt / Ti / SiO_2 / Si衬底上制备了具有Er_2O_3掺杂的钛酸铋铋（Bi_（4-x）Er_xTi_3O_（12），BET）和纯Bi_4Ti_3O_（12）（BIT）随机取向薄膜。这些样品具有没有优选取向的多晶双层钙钛矿结构，并且由具有随机取向的发达的棒状晶粒组成。 Er掺入BIT导致居里温度（Tc）从675℃大幅降低至较低温度，并改善了介电性能。实验结果表明，掺入BIT的Er还可显着改善铁电性能。 x ＝ 0.75的BET膜的P_r和E_c值分别为21μC/ cm〜2和80kV / cm。

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  • 来源
    《Inorganic thin films and coatings》|2012年|118-121|共4页
  • 会议地点 Guilin(CN)
  • 作者

    X. B. Liu; X. A. Mei; C. Q. Huang; J. Liu;

  • 作者单位

    School of Physics and Electronics, Hunan Institute of Science and Technology, Yueyang, 414000,China;

    School of Physics and Electronics, Hunan Institute of Science and Technology, Yueyang, 414000,China;

    School of Physics and Electronics, Hunan Institute of Science and Technology, Yueyang, 414000,China;

    School of Physics and Electronics, Hunan Institute of Science and Technology, Yueyang, 414000,China;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Ferroelectric; Dielectric; Films;

    机译：铁电;电介质电影;

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