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Characterization and Electrochemical Performances of Vanadium Oxide Films Doped with Metal Ions

机译：金属离子掺杂钒氧化物薄膜的表征与电化学性能

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Vanadium oxide films were prepared via the sol-gel process and dip coating method, using V_2O_5 as raw materials and H_2O_2 (volume fraction 30) as the solvent. Mn and Ni ions were added to vanadium oxide sol to prepare doping vanadium oxide films. The films were characterized by atomic force microscopy, FT-IR, X-ray diffraction and electrochemical techniques. The add-on of Metal ions will not affect the morphology of the vanadium oxide films, but change the valence of vanadium ion and vanadium oxide crystal phase. Furthermore, cyclic voltammetry curves show that metal ions doping vanadium oxide films exhibit reversible electrochemical reaction. But electrochemical impedance spectroscopy indicates pure vanadium oxide film has a better diffusion rate.

机译：以V_2O_5为原料，H_2O_2（体积分数为30）为溶剂，通过溶胶-凝胶法和浸涂法制备了氧化钒薄膜。将Mn和Ni离子添加到氧化钒溶胶中以制备掺杂的氧化钒膜。通过原子力显微镜，FT-IR，X射线衍射和电化学技术对薄膜进行了表征。金属离子的添加不会影响钒氧化物膜的形态，但会改变钒离子和钒氧化物晶相的化合价。此外，循环伏安曲线表明，掺杂钒氧化物膜的金属离子表现出可逆的电化学反应。但是电化学阻抗谱表明纯钒氧化物膜具有更好的扩散速率。

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来源
《Inorganic thin films and coatings》|2012年|174-178|共5页
会议地点 Guilin(CN)
作者
Wang Jichao; Wu Guangming; Gao Guohua; Zhou Xiaowei;
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作者单位

Pohl Institute of Solid State Physics, Tongji University, Shanghai, China;

Pohl Institute of Solid State Physics, Tongji University, Shanghai, China;

Pohl Institute of Solid State Physics, Tongji University, Shanghai, China;

Pohl Institute of Solid State Physics, Tongji University, Shanghai, China;

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原文格式 PDF
正文语种 eng
中图分类
关键词
vanadium oxide film; sol-gel process; doping; diffusion rate;

机译：氧化钒膜;溶胶-凝胶法掺杂扩散率;

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Characterization and Electrochemical Performances of Vanadium Oxide Films Doped with Metal Ions

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