• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>International Conference on Energy, Communication, Data Analytics and Soft Computing >Design and EM-simulation of MIM capacitor
【24h】

Design and EM-simulation of MIM capacitor

机译：MIM电容器的设计与EM仿真

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The passive RF/Microwave circuit components such as capacitor and inductor are essential in the design of deep submicron multilayer circuits (MIC). The passive component has characteristics to dissipate energy and reduce circuit efficiency. To overcome this, we need to design an accurate value of passive components by scaling geometric structure with respect our applications. In this paper, we design metal insulator metal (MIM) capacitor and it has advantages of low cost and higher performance efficiency. The MIM capacitor is designed by using RT/Duroid substrate material with copper conductor plates (0.035 thickness). The basic formula is used for a geometric calculation like area, dielectric constant and the distance between the two conductor plates. The designed MIM structure is EM simulated using high-frequency NI/AWR simulator. The observed results show that an increases in conductor plate's area will increase the capacitance value by decreasing capacitive reactance (Xc). The larger area of the plates will affect to decreases quality factor due to increase in the passivity of the structure. This work helps to design suitable value of MIM capacitors design at the 600MHZ operating frequency. We present EM simulated data showing how the quality factor depends on with respect to plate area, capacitive reactance, passivity and capacitance value.
机译：无源RF /微波电路组件（例如电容器和电感器）在深亚微米多层电路（MIC）的设计中至关重要。无源元件具有耗散能量并降低电路效率的特性。为了克服这个问题，我们需要通过根据我们的应用缩放几何结构来设计无源元件的准确值。本文设计了金属绝缘体金属（MIM）电容器，它具有成本低，性能效率高的优点。 MIM电容器是通过使用RT / Duroid基体材料和铜导体板（厚度为0.035）来设计的。基本公式用于几何计算，例如面积，介电常数和两个导体板之间的距离。使用高频NI / AWR模拟器对设计的MIM结构进行EM仿真。观察到的结果表明，导体板面积的增加将通过减小电容电抗（Xc）来增加电容值。板的较大面积将由于结构无源性的增加而影响降低品质因数。这项工作有助于设计在600MHZ工作频率下合适的MIM电容器设计值。我们提供的EM模拟数据显示了品质因数如何取决于板面积，电容电抗，无源性和电容值。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号