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Characterization, and modeling of memristor devices

机译：忆阻器器件的表征和建模

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The memristor is a passive two-terminal device that has been invented in 1971 by L. Chua and manufactured in 2008 by a team led by R.S. Williams in HP Labs. Notwithstanding the knowledge of its ordinary basic I-V characteristics, its behavior not fully understood until now. Hence, it leads us to study the operating behavior of such device in order to classify and identify its basic characteristics. Recently, several memristor devices have been developed in the literature and modeling SPICE memristors seem to be an adequate modeling technique, for its simplicity and flexibility, in order to analyze memristor models using simple and effective methods. In this paper, we adapt a SPICE memristor model, based on the implementation of several parameters. This enables the changing on the I-V characteristics of the device in order to correlate different memristive characterization data using different types of voltage polarizations. Our simulation results demonstrate the flexibility and reliability of our work model. It has been committed to prove the basic I-V characteristics of such device, the switching behavior of this model for different applications (biological, neuromorphic...).
机译：忆阻器是一种无源两端子设备，由L.Chua于1971年发明，并于2008年由R.S. HP Labs中的Williams。尽管了解其普通的基本I-V特性，但到目前为止还没有完全了解其行为。因此，它引导我们研究这种设备的操作行为，以对其进行分类和识别。最近，在文献中已经开发了几种忆阻器装置，并且建模SPICE忆阻器由于其简单性和灵活性似乎是一种适当的建模技术，以便使用简单有效的方法来分析忆阻器模型。在本文中，我们基于几个参数的实现改编了SPICE忆阻器模型。这样可以改变设备的I-V特性，以便使用不同类型的电压极化将不同的忆阻特性数据关联起来。我们的仿真结果证明了我们工作模型的灵活性和可靠性。致力于证明这种设备的基本I-V特性，该模型针对不同应用（生物，神经形态...）的开关行为。

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